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1MG68PU-R2 Distributor |
| Distributor | Part # | Manufacturer | Description | Price | Qty. BuyNow | |
![]() TME | UPV0J271MGD | Nichicon Corporation | Capacitor: electrolytic; low ESR; THT; 270uF; 6.3VDC; Ø8x11.5mm RoHS : Compliant |
| 507 | |
| UPV1A271MGD | Nichicon Corporation | Capacitor: electrolytic; low ESR; THT; 270uF; 10VDC; Ø8x11.5mm RoHS : Compliant |
| 139 | ||
| TD3061(M)-GV | Brightek Optoelectronic Co Ltd | Optotriac; 5kV; triac; DIP6 Gullwing; Colour: black |
| 0 | ||
| VB1H221MG105000CE0 | Chang Yang Electronics Ltd (Capacitors) | Capacitor: electrolytic; SMD; 220uF; 50VDC; Ø10x10.5mm; ±20%; VB |
| 0 | ||
| VT1E471MG105000CE0 | Chang Yang Electronics Ltd (Capacitors) | Capacitor: electrolytic; SMD; 470uF; 25VDC; Ø10x10.5mm; ±20%; VT |
| 0 | ||
| TD3041(M)-GV | Brightek Optoelectronic Co Ltd | Optotriac; 5kV; triac; DIP6 Gullwing; Colour: black |
| 0 | ||
| UPV1C181MGD | Nichicon Corporation | Capacitor: electrolytic; low ESR; THT; 180uF; 16VDC; Ø8x11.5mm RoHS : Compliant |
| 0 | ||
| UPV1C221MGD | Nichicon Corporation | Capacitor: electrolytic; low ESR; THT; 220uF; 16VDC; Ø8x11.5mm RoHS : Compliant |
| 0 | ||
| VH1J101MG105000CE0 | Chang Yang Electronics Ltd (Capacitors) | Capacitor: electrolytic; SMD; 100uF; 63VDC; Ø10x10.5mm; ±20%; VH |
| 0 | ||
| VT1A681MG105000CE0 | Chang Yang Electronics Ltd (Capacitors) | Capacitor: electrolytic; SMD; 680uF; 10VDC; Ø10x10.5mm; ±20%; VT |
| 0 | ||
| VD1C471MG105000CE0 | Chang Yang Electronics Ltd (Capacitors) | Capacitor: electrolytic; SMD; 470uF; 16VDC; Ø10x10.5mm; ±20%; VD |
| 0 | ||
| VS1E331MG105000CE0 | Chang Yang Electronics Ltd (Capacitors) | Capacitor: electrolytic; SMD; 330uF; 25VDC; Ø10x10.5mm; ±20%; VS |
| 0 | ||
| VD1V221MG105000CE0 | Chang Yang Electronics Ltd (Capacitors) | Capacitor: electrolytic; SMD; 220uF; 35VDC; Ø10x10.5mm; ±20%; VD |
| 0 | ||
| VS1V221MG105000CE0 | Chang Yang Electronics Ltd (Capacitors) | Capacitor: electrolytic; SMD; 220uF; 35VDC; Ø10x10.5mm; ±20%; VS |
| 0 | ||
| VH1C681MG105000CE0 | Chang Yang Electronics Ltd (Capacitors) | Capacitor: electrolytic; SMD; 680uF; 16VDC; Ø10x10.5mm; ±20%; VH |
| 0 | ||
![]() ComSIT USA | RZD35V331MG10TQR2 | ELNA America Inc | AVAILABLE EU | 18,722 | ||
![]() GLYN GmbH & Co. KG | CC7V-T1A-200041-MG03 | Micro Crystal AG | CC7V-T1A, 32.768kHz, 9pF, 20ppm TA-QC -40 to +8 | 9,000 | ||
![]() PEI Genesis | ELFP1621MG | Amphenol PCD |
| 0 | ||
| SB611MG05W2P0001AN | SOURIAU-SUNBANK |
| 0 | |||
| SB611MG05W2P0008AN | SOURIAU-SUNBANK |
| 0 | |||
![]() Rutronik | GR1J101MG125B50CEH | Chang Yang Electronics Ltd (Capacitors) | GR 100uF 63V 20% 10x12/5,0 RoHS : Compliant |
| 39,000 | |
| GR1C471MG125A00CEH | Chang Yang Electronics Ltd (Capacitors) | GR 470uF 16V 20% 10x12/5,0 RoHS : Compliant |
| 10,000 | ||
| GK1C471MG125B50CE0 | Chang Yang Electronics Ltd (Capacitors) | GK 470uF 16V 20% 10x12/5,0 RoHS : Compliant |
| 1,500 | ||
![]() Avnet Asia | LG Q976.01-MGNI-35-1-20-R18 | ams OSRAM Group | (Alt: LG Q976.01-MGNI-35-1-20-R18) RoHS : Compliant | 0 | ||
| RZR040P01MGTL | ROHM Semiconductor | Power MOSFET, P Channel, 12 V, 4 A, 30 Milliohms, TSMT, 3 Pins, Surface Mount (Alt: RZR040P01MGTL) RoHS : Compliant | 0 | |||
![]() EBV Elektronik | STM32C591MGT6 | STMicroelectronics | STM32C (Alt: STM32C591MGT6) RoHS : Compliant | 0 | ||
| NJU72501MG2-TE1 | Nisshinbo Micro Devices | (Alt: NJU72501MG2-TE1) RoHS : Compliant | 0 | |||
| LGQ976.01-MGNI-35-1-20-R18 | ams OSRAM Group | LED Single Chip Green 573nm 30mA 2Pin SMD TR (Alt: Q65113A5260) RoHS : Compliant | 0 | |||
![]() Vyrian | 101MG7 | Honeywell Sensing And Control | Analog Circuit, 1 Func | 12,997 | ||
| BPS130-HA030P-1MG | Bourns Inc | Piezoresistive Sensor, Absolute, 0Psi Min, 30Psi Max, 0.5-4.5V, Rectangular, Manifold Mount RoHS : Compliant | 9,135 | |||
CD74HC151MG4![]() | Texas Instruments | Multiplexer, HC/UH Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, PDSO16 RoHS : Compliant | 6,207 | |||
| MAX6831MGUT-T | Analog Devices Inc | Power Supply Management Circuit, Fixed, 2 Channel, BICMOS, PDSO6 RoHS : Not Compliant | 5,654 | |||
| MT42L64M32D1MG-25AT:A | Micron Technology Inc | LPDDR2 DRAM, 64MX32, CMOS, PBGA134 RoHS : Compliant | 4,931 | |||
| MT42L128M64D1MG-3IT:A | Micron Technology Inc | LPDDR2 DRAM, 128MX64, CMOS, PBGA134 | 4,645 | |||
| 10AX066H2F34I1MG | Intel Corporation | Field Programmable Gate Array, PBGA1152 RoHS : Compliant | 4,091 | |||
| MT42L128M16D1MG-25IT:A | Micron Technology Inc | LPDDR2 DRAM, 128MX16, CMOS, PBGA134 RoHS : Compliant | 4,048 | |||
| 10AX090H2F34I1MG | Intel Corporation | Field Programmable Gate Array, PBGA1152 RoHS : Compliant | 4,037 | |||
| 10AX066H1F34E1MG | Intel Corporation | Field Programmable Gate Array, PBGA1152 RoHS : Compliant | 3,615 | |||
| 10AX048K1F35E1MG | Intel Corporation | Field Programmable Gate Array, PBGA1152 RoHS : Compliant | 2,975 | |||
| 10AS032E2F29I1MG | Intel Corporation | Field Programmable Gate Array, PBGA780 RoHS : Compliant | 2,651 | |||
| 10AX066K2F36I1MG | Intel Corporation | Field Programmable Gate Array, PBGA1152 RoHS : Compliant | 1,571 | |||
| 10AS066H2F34I1MG | Intel Corporation | Field Programmable Gate Array, PBGA1152 RoHS : Compliant | 1,554 | |||
| 10AX027H2F34I1MG | Intel Corporation | Field Programmable Gate Array, PBGA1152 RoHS : Compliant | 1,483 |
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