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50N06L-TND-R Distributor |
| Distributor | Part # | Manufacturer | Description | Price | Qty. BuyNow | |
![]() DigiKey | FQB50N06LTM | FLIP ELECTRONICS | MOSFET N-CH 60V 52.4A D2PAK |
| 18,400 | |
| RF1S50N06LE | Rochester Electronics LLC | N-CHANNEL POWER MOSFET |
| 4,042 | ||
| DI050N06D1 | Diotec Semiconductor AG | MOSFET, DPAK, 60V, 50A, 0, 42W RoHS : Compliant |
| 2,565 | ||
| DI050N06D1 | Diotec Semiconductor AG | MOSFET, DPAK, 60V, 50A, 0, 42W RoHS : Compliant |
| 2,565 | ||
| DI050N06D1 | Diotec Semiconductor AG | MOSFET, DPAK, 60V, 50A, 0, 42W RoHS : Compliant |
| 2,565 | ||
| MOT50N06D | Advanced Fiber Resources (Wuhan) Ltd | MOSFET N-CH 60V 50A 13m To-252 |
| 2,500 | ||
| IPD50N06S2-14 | UMW | MOSFET N-CH 60V 50A DPAK |
| 2,470 | ||
| 50N06 | UMW | TO-252 MOSFETS ROHS |
| 846 | ||
| 50N06 | UMW | TO-252 MOSFETS ROHS |
| 846 | ||
| RFP50N06 | Rochester Electronics LLC | MOSFET N-CH 60V 50A TO220-3 RoHS : Not Compliant |
| 665 | ||
| RF1S50N06SM9AS2551 | Rochester Electronics LLC | MOSFET 60V 50A |
| 653 | ||
| 50M100150N060B | Essentra Components | PAN SLOTTED SCREW, M10 X 1.5 THR |
| 500 | ||
| 050N0600A06442020N0001 | KORATECH | 50N*600mm*0.5P*(4/4/20/20)*P6 |
| 500 | ||
| QBC4050N060N75 | NetPower Technologies Inc | DC DC CONVERTER 5V 300W |
| 45 | ||
| 50N06 | UMW | TO-252 MOSFETS ROHS |
| 0 | ||
![]() Avnet Americas | RFP50N06 | onsemi | N-Channel Power MOSFET 60V, 50A, 22mO - Rail/Tube (Alt: RFP50N06) RoHS : Compliant |
| 30 | |
| FQB50N06LTM | onsemi | Power MOSFET, N-Channel, Logic Level, QFET?, 60 V, 52.4 A, 21 m?, D2PAK - Tape and Reel (Alt: FQB50N06LTM) RoHS : Compliant |
| 0 | ||
| IPD350N06LGATMA1 | Infineon Technologies AG | IPD350N06LGATMA1 - Tape and Reel (Alt: IPD350N06LGATMA1) RoHS : Not Compliant | 0 | |||
| WMG50N06B2ST | WeEn Semiconductor Co Ltd | WMG50N06B2S/WeEnPACK-B2,WeEnPACK-B2/STANDARD MARKING*TRAY PACK,EPE OR BLISTER/12NC: 934074389300 - Trays (Alt: WMG50N06B2ST) RoHS : Not Compliant |
| 0 | ||
IPD50N06S214ATMA2![]() | Infineon Technologies AG | Power MOSFET, N Channel, 55 V, 50 A, 0.0108 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: IPD50N06S214ATMA2) RoHS : Compliant |
| 0 | ||
IPD50N06S4L12ATMA2![]() | Infineon Technologies AG | Power MOSFET, N Channel, 60 V, 50 A, 0.012 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: IPD50N06S4L12ATMA2) RoHS : Compliant |
| 0 | ||
| D650N06TXPSA1 | Infineon Technologies AG | Rectifier Diode (non Schottky) 600V 650A 2-Pin BG-D4214K0-1 Tray - Trays (Alt: D650N06TXPSA1) RoHS : Compliant | 0 | |||
IPD50N06S4L08ATMA2![]() | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50N06S4L08ATMA2) RoHS : Compliant |
| 0 | ||
| SGM41100-450N06YUDT6G/TR | SG Micro Corp | - Tape and Reel (Alt: SGM41100-450N06YUDT6G/TR) RoHS : Not Compliant |
| 0 | ||
| TSM850N06CX RFG | Taiwan Semiconductor | - Tape and Reel (Alt: TSM850N06CX RFG) RoHS : Compliant |
| 0 | ||
| SQD50N06-09L-GE3 | Vishay Intertechnologies | - Tape and Reel (Alt: SQD50N06-09L-GE3) RoHS : Compliant | 0 | |||
| SQD50N06-09L_GE3 | Vishay Intertechnologies | - Tape and Reel (Alt: SQD50N06-09L_GE3) RoHS : Compliant |
| 0 | ||
IPD50N06S409ATMA2![]() | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50N06S409ATMA2) RoHS : Compliant |
| 0 | ||
IPD50N06S2L13ATMA2![]() | Infineon Technologies AG | Trans MOSFET N-CH 55V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50N06S2L13ATMA2) RoHS : Compliant |
| 0 | ||
| D2450N06TXPSA1 | Infineon Technologies AG | Rectifier Diode (non Schottky) 600V 2450A Type N 58mm Diam - Trays (Alt: D2450N06TXPSA1) RoHS : Compliant |
| 0 | ||
![]() Newark | IPD50N06S2L13ATMA2![]() | Infineon Technologies AG | MOSFET, N-CH, 55V, 175DEG C, 136W; RoHS : Compliant |
| 5,861 | |
IPD50N06S2L13ATMA2![]() | Infineon Technologies AG | MOSFET, N-CH, 55V, 175DEG C, 136W; RoHS : Compliant |
| 5,861 | ||
IPD50N06S4L12ATMA2![]() | Infineon Technologies AG | MOSFET, AEC-Q101, N-CH, 60V, 50A, TO-252; RoHS : Compliant |
| 4,660 | ||
IPD50N06S4L12ATMA2![]() | Infineon Technologies AG | MOSFET, AEC-Q101, N-CH, 60V, 50A, TO-252; RoHS : Compliant |
| 4,660 | ||
IPD50N06S214ATMA2![]() | Infineon Technologies AG | MOSFET, N-CH, 55V, 50A, TO-252; RoHS : Compliant |
| 4,215 | ||
| SQD50N06-09L_GE3 | Vishay Intertechnologies | MOSFET N-CH 60V 50A DPAK AEC-Q101; RoHS : Compliant |
| 3,695 | ||
| SQD50N06-09L_GE3 | Vishay Intertechnologies | N-CHANNEL 60-V (D-S) 175C MOSFET; RoHS : Compliant |
| 2,000 | ||
IPD50N06S409ATMA2![]() | Infineon Technologies AG | MOSFET, AEC-Q100, N-CH, 60V, TO-252; RoHS : Compliant |
| 1,900 | ||
IPD50N06S409ATMA2![]() | Infineon Technologies AG | MOSFET, AEC-Q100, N-CH, 60V, TO-252; RoHS : Compliant |
| 1,900 | ||
| DI050N06D1 | Diotec Semiconductor AG | MOSFET, N-CHANNEL, 65V, 50A, TO-252AA; RoHS : Compliant |
| 1,285 | ||
| DI050N06D1 | Diotec Semiconductor AG | MOSFET, N-CHANNEL, 65V, 50A, TO-252AA; RoHS : Compliant |
| 1,285 | ||
| 23EZS0450N0625 | Essentra Components | CABLE TIE, TWISTLOCK, 0.453", NAT, PA6.6; Cable Tie Material:Nylon 6.6 (Polyamide 6.6); Cable Tie Length:2.05"; Cable Tie Width:0.562"; Cable Bundle Diameter Max:0.453"; Cable Tie Type:Kurly/Twist Lock; Product Range:- RoHS Compliant: Yes RoHS : Compliant |
| 990 | ||
| RFP50N06 | onsemi | N CHANNEL MOSFET, 60V, 50A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes RoHS : Compliant |
| 772 | ||
| RFP50N06 | onsemi | MOSFET Transistor, N Channel, 50 A, 60 V; RoHS : Compliant |
| 113 | ||
| DIT050N06 | Diotec Semiconductor AG | MOSFET, N-CH, 60V, 50A, TO-220AB-3; RoHS : Compliant |
| 45 | ||
![]() RS | VHS50-N06B-Z | SMC Corporation of America | MANUAL VALVE, AIR PRESSURE RELIEF, 3/4NPTF, 3 PORT, 1 MPA, VHS SERIES |
| 19 | |
| AF50-N06-Z-A | SMC Corporation of America | AIR FILTER, 5 MICRON, 3/4 NPT, AF SERIES |
| 6 | ||
| VHS50-N06-MZ-D | SMC Corporation of America | VALVE, PRESSURE RELIEF 3 PORT, VHS SERIES |
| 2 | ||
| AF50-N06C-Z | SMC Corporation of America | FILTER, MODULAR, 3/4NPT, AIRLINE |
| 1 | ||
| AF50-N06D-8Z | SMC Corporation of America | FILTER, AIR, MODULAR F.R.L. |
| 1 | ||
| AF50-N06D-Z-A | SMC Corporation of America | FILTER, AIR, 100 PSI, 3/4NPT, NO DRAIN |
| 1 | ||
| AF50-N06C-Z-A | SMC Corporation of America | FILTER, AF SERIES |
| 1 | ||
| VHS50-N06-Z-D | SMC Corporation of America | PRESSURE RELIEF 3 PORT VALVE, VHS SERIES |
| 1 | ||
| AL50-N06-3Z-A | SMC Corporation of America | LUBRICATOR, AIR, 3/4NPT, DRAIN COCK, TRANSPARENT BOWL GUARD |
| 1 | ||
| AR50-N06BG-Z-D | SMC Corporation of America | REGULATOR, MODULAR, AR-D SERIES |
| 1 | ||
| AR50-N06-Z-B-X425 | SMC Corporation of America | REGULATOR, AR-B SERIES |
| 1 | ||
| AC50-N06D-3Z-B | SMC Corporation of America | F/R/L COMBO MODULAR, AC SERIES |
| 0 | ||
| AC50-N06DE3-3Z-B | SMC Corporation of America | FILTER/REGULATOR/LUBRICATOR, 3/4NPT, 125PSI, PNP, URBAN WHITE, AC50-B SERIES |
| 0 | ||
| AC50-N06CG-V-8Z-D | SMC Corporation of America | F/R/L COMBO MODULAR, AC-D SERIES |
| 0 | ||
| AC50-N06DG-ST-Z-B | SMC Corporation of America | F/R/L COMBO MODULAR, AC-B SERIES |
| 0 | ||
![]() Rochester Electronics | RFP50N06 | onsemi | MOSFET N-Channel 60V 50A (Tc) TO-220-3 Tube RoHS : Not Compliant |
| 520 | |
| FQI50N06TU | onsemi | Power MOSFET, N-Channel, QFET®, 60 V, 50 A, 22 mΩ, I2PAK RoHS : Compliant |
| 28,073 | ||
IPD50N06S409ATMA2![]() | Infineon Technologies AG | MOSFET N-Channel 60V 50A (Tc) TO-252-3 T/R RoHS : Compliant |
| 4,986 | ||
IPD350N06LGBTMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 29A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS : Compliant |
| 7,464 | ||
| IPD50N06S4L08ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant |
| 2,268 | ||
IPD50N06S4L08ATMA2![]() | Infineon Technologies AG | MOSFET N-Channel 60V 50A (Tc) TO-252-3 T/R RoHS : Compliant |
| 39,026 | ||
| IPD50N06S4L12ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant |
| 251 | ||
FQI50N06TU![]() | Fairchild Semiconductor Corporation | Power MOSFET, N-Channel, QFET®, 60 V, 50 A, 22 mΩ, I2PAK RoHS : Compliant |
| 1,792 | ||
| RFP50N06 | Fairchild Semiconductor Corporation | MOSFET N-Channel 60V 50A (Tc) TO-220-3 Tube RoHS : Not Compliant |
| 665 | ||
| RF1S50N06 | Harris Semiconductor | 50A, 60V, 0.022 OHM, N-Channel POWER MOSFET RoHS : Not Compliant |
| 2,746 | ||
| RF1S50N06LE | Harris Semiconductor | Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS : Not Compliant |
| 4,042 | ||
| RF1S50N06LESM | Harris Semiconductor | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Not Compliant |
| 1,705 | ||
| RF1S50N06SM9AS2551 | Harris Semiconductor | 50A, 60V, 0.022 Ohm, Esd Rated, Logic Level N-Channel Power Mosfet RoHS : Not Compliant |
| 653 | ||
| RFP50N06 | Harris Semiconductor | MOSFET N-Channel 60V 50A (Tc) TO-220-3 Tube RoHS : Not Compliant |
| 10,425 | ||
| RFP50N06R4034 | Harris Semiconductor | 50A, 60V, 0.022 OHM, N-Channel POWER MOSFET RoHS : Not Compliant |
| 3,250 | ||
![]() TME | IPD350N06L G | Infineon Technologies AG | Transistor: N-MOSFET; 60V; 29A; 68W; DPAK3 |
| 5,000 | |
| 382LX102M450N062 | Knowles Precision Devices | Capacitor: electrolytic; 1mF; 450VDC |
| 2,021 | ||
IPD50N06S4L12ATMA2![]() | Infineon Technologies AG | Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W RoHS : Compliant |
| 1,152 | ||
| DI050N06D1 | Diotec Semiconductor AG | Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W RoHS : Compliant |
| 858 | ||
| WMK50N06TS | Cyg Wayon Circuit Protection Co Ltd | Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO220-3 RoHS : Compliant |
| 774 | ||
| 382LX821M450N062 | Knowles Precision Devices | Capacitor: electrolytic; THT; 820uF; 450VDC; 10mm; ±20%; 3000h; 3.7A |
| 100 | ||
| RFP50N06 | onsemi | Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB RoHS : Compliant |
| 1 | ||
| DI050N06PQ2-AQ | Diotec Semiconductor AG | Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 280A; 40.5W RoHS : Compliant |
| 0 | ||
| DI050N06D1-AQ | Diotec Semiconductor AG | Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W |
| 0 | ||
| G050N06LL | Goford Semiconductor | Transistor: N-MOSFET; Trench; unipolar; 60V; 5A; 1.25W; SOT23-6 |
| 0 | ||
| TSM850N06CX RFG | Taiwan Semiconductor | Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23 |
| 0 | ||
IPD50N06S4L08ATMA2![]() | Infineon Technologies AG | Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A RoHS : Compliant |
| 0 | ||
IPD50N06S2L13ATMA2![]() | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| MCACD50N06YHE3-TP | Micro Commercial Components | Transistor: N-MOSFET x2; unipolar; 60V; 50A; PDFN5060D-8 RoHS : Compliant |
| 0 | ||
| D2450N06TXPSA1 | Infineon Technologies AG | Diode: hockey-puck rectifying RoHS : Compliant |
| 0 | ||
![]() Ameya Holding Limited | RSD050N06TL![]() | ROHM Semiconductor | RoHS : Compliant |
| 90 | |
![]() ComSIT USA | IPD50N06S4L12ATMA2![]() | Infineon Technologies AG | AVAILABLE EU RoHS : Compliant | 28,240 | ||
![]() ComSIT USA | IPD50N06S4L08 | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant | 9,945 | ||
| SQD50N0609LGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant | 4,000 | |||
| SYD50N0609LE3 | Vishay Intertechnologies | Electronic Component RoHS : Compliant | 2,000 | |||
| SUD50N0607LE3 | Vishay Intertechnologies | N-CHANNEL 60-V (D-S), 175 DEGREE CENTIGRADE MOSFET Power Field-Effect Transistor, 50A I(D), 60V, 0.0148ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant | 1,215 | |||
| MTB50N06VLT4 | Motorola Semiconductor Products | 60 VOLTS, 42 AMPS LOGIC LEVEL POWER MOSFET Power Field-Effect Transistor, 42A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Not Compliant | 1,180 | |||
| SUD50N0609L03 | Vishay Intertechnologies | N-CHANNEL 60 V (D-S), 175 DEGREE CELSIUS MOSFET, LOGIC LEVEL Power Field-Effect Transistor, 50A I(D), 60V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS : Compliant | 895 | |||
FQB50N06TM![]() | Fairchild Semiconductor Corporation | N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Not Compliant | 800 | |||
| SUM50N0616LE3 | Vishay Intertechnologies | N-CHANNEL 60-V (D-S) 175 DEGREE CELSIUS LOGIC LEVEL MOSFET Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 340 | |||
![]() NexGen Digital | IPD50N06S4-09 | Nexperia | 2,130 | |||
| SUD50N06-09L-E3 | Vishay Huntington | 24 | ||||
| SQD50N06-09L_GE3 | Vishay Huntington | 6 | ||||
![]() Richardson RFPD | WMK50N06TS | Cyg Wayon Circuit Protection Co Ltd | PWRMOSFET TRANSISTOR RoHS : Compliant | 0 | ||
![]() Chip 1 Exchange | IPD50N06S2L-13 | INSTOCK | 2,500 | |||
| SMP50N0625 | INSTOCK | 930 | ||||
IPD50N06S4L08ATMA2![]() | Infineon Technologies AG | INSTOCK RoHS : Compliant | 921 | |||
IPD50N06S4L-08![]() | Infineon Technologies AG | INSTOCK RoHS : Compliant | 921 | |||
FQP50N06L![]() | Fairchild Semiconductor Corporation | INSTOCK RoHS : Compliant | 200 | |||
| MTP50N06V | INSTOCK | 151 | ||||
![]() Avnet Abacus | SUD50N06-09L-E3 | Vishay Intertechnologies | (Alt: SUD50N06-09L-E3) RoHS : Compliant | 0 | ||
![]() Avnet Asia | RFP50N06 | onsemi | N-Channel Power MOSFET 60V, 50A, 22mO (Alt: RFP50N06) RoHS : Compliant |
| 0 | |
| PCFQ50N06LW | onsemi | (Alt: PCFQ50N06LW) RoHS : Compliant | 0 | |||
| RSD050N06FRATL | ROHM Semiconductor | (Alt: RSD050N06FRATL) RoHS : Compliant | 0 | |||
![]() Avnet Silica | RFP50N06 | onsemi | NChannel Power MOSFET 60V 50A 22mO (Alt: RFP50N06) RoHS : Compliant | 0 | ||
| FQP50N06 | onsemi | Power MOSFET NChannel QFET 60 V 50 A 22 m TO220 (Alt: FQP50N06) RoHS : Compliant | 0 | |||
| PCFQ50N06LW | onsemi | (Alt: PCFQ50N06LW) RoHS : Compliant | 0 | |||
![]() DB Roberts | 50M100150N060B | Essentra Components | PAN SLOTTED SCREW, M10 X 1.5 T | 0 | ||
| 23EZS0450N0625 | Essentra Components | STANDOFF TWIST LOCK, .450 HOLD | 0 | |||
| 50M100150N060 | Essentra Components | PAN SLOTTED SCREW, M10 X 1.5 T | 0 | |||
| 23EZS0450N0625B | Essentra Components | EZ STANDOFF 450 X 625 BLK M111 | 0 | |||
![]() EBV Elektronik | IPD50N06S4L08ATMA2![]() | Infineon Technologies AG | Trans MOSFET NCH 60V 50A 3Pin TO252 TR (Alt: SP001028664) RoHS : Compliant | 50,000 | ||
IPD50N06S2L13ATMA2![]() | Infineon Technologies AG | Trans MOSFET NCH 55V 50A 3Pin TO252 TR (Alt: SP001063626) RoHS : Compliant | 7,500 | |||
IPD50N06S4L12ATMA2![]() | Infineon Technologies AG | Power MOSFET N Channel 60 V 50 A 0012 ohm TO252 DPAK Surface Mount (Alt: SP001028640) RoHS : Compliant | 2,500 | |||
| RFP50N06 | onsemi | NChannel Power MOSFET 60V 50A 22mO (Alt: RFP50N06) RoHS : Compliant | 300 | |||
| D2450N06TXPSA1 | Infineon Technologies AG | Rectifier Diode non Schottky 600V 2450A Type N 58mm Diam (Alt: SP000785948) RoHS : Compliant | 0 | |||
| NVBG050N065SC1 | onsemi | Silicon Carbide MOSFET (Alt: NVBG050N065SC1) RoHS : Compliant | 0 | |||
| TSM850N06CX RFG | Taiwan Semiconductor | (Alt: TSM850N06CX RFG) RoHS : Compliant | 0 | |||
| SQD50N06-09L-GE3 | Vishay Intertechnologies | (Alt: SQD50N06-09L-GE3) RoHS : Compliant | 0 | |||
| SQD50N06-09L_GE3 | Vishay Intertechnologies | (Alt: SQD50N06-09L_GE3) RoHS : Compliant | 0 | |||
IPD50N06S214ATMA2![]() | Infineon Technologies AG | Power MOSFET N Channel 55 V 50 A 00108 ohm TO252 DPAK Surface Mount (Alt: SP001063624) RoHS : Compliant | 0 | |||
![]() Flip Electronics | FQB50N06LTM | onsemi | Stock, Ship Today RoHS : Compliant | 18,400 | ||
| PCFQ50N06LW | onsemi | Stock, Ship Today | 12,318 | |||
![]() Master Electronics | RFP50N06 | onsemi | The RFP50N06 is a 60V 50A N-Channel power MOSFET featuring a low on-resistance of 0.022Ω in a TO-220AB package. RoHS : Not Compliant |
| 7,900 | |
| DI050N06D1 | Diotec Semiconductor AG | MOSFET - DPAK - N - 60V - 50A - 8.5mΩ - 150°C RoHS : Compliant |
| 0 | ||
| DIT050N06 | Diotec Semiconductor AG | MOSFET - TO-220AB - N - 60V - 50A - 14mΩ - 175°C RoHS : Compliant |
| 0 | ||
| 382LX102M450N062 | Knowles CDE | Aluminum Electrolytic Capacitor RoHS : Compliant |
| 0 | ||
![]() Vyrian | RSD050N06TL![]() | ROHM Semiconductor | Power Field-Effect Transistor, 5A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 15,500 | ||
SPD50N06S2L-13![]() | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 55V, 0.0167ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Not Compliant | 12,725 | |||
| FQP50N06L-EPKE0003 | onsemi | Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 11,805 | |||
| IPD350N06LGBUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 29A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 10,596 | |||
IPB050N06NGATMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 9,718 | |||
RSD150N06TL![]() | ROHM Semiconductor | Power Field-Effect Transistor, 15A I(D), 60V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 9,279 | |||
| D650N06TXPSA1 | Infineon Technologies AG | Rectifier Diode, 1 Phase, 1 Element, 650A, 600V V(RRM), Silicon RoHS : Compliant | 7,467 | |||
IPP050N06NG![]() | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 7,450 | |||
| IPD50N06S2L13ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 55V, 0.0167ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,838 | |||
| SQP50N06-09L_GE3 | Vishay / Siliconix | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,340 | |||
STP50N06![]() | STMicroelectronics | Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 802 | |||
FQB50N06TM![]() | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 629 | |||
| RFP50N06_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 479 | |||
FQB50N06LTM![]() | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 400 | |||
| RFP50N06-F102 | Fairchild Semiconductor Corporation | Transistor | 249 | |||
![]() Win Source Electronics | LM1117MPX-5.0 /N06A | Texas Instruments |
| 38,680 | ||
IPD50N06S4L08ATMA2![]() | Infineon Technologies AG | MOSFET N-CH 60V 50A TO252-31 / N-Channel 60 V 50A (Tc) 71W (Tc) Surface Mount PG-TO252-3-11 RoHS : Compliant |
| 27,380 | ||
| 50N06 | Nexperia | TO-252 MOSFETS ROHS |
| 21,180 | ||
| SQD50N06-09L_GE3 | Vishay Huntington | N-Channel 60 V 50A (Tc) 136W (Tc) Surface Mount TO-252AA |
| 19,200 | ||
IPD50N06S4L12ATMA2![]() | Infineon Technologies AG | MOSFET N-CH 60V 50A TO252-31 RoHS : Compliant |
| 17,000 | ||
FQB50N06TM![]() | Fairchild Semiconductor Corporation | MOSFET N-CH 60V 50A D2PAK RoHS : Compliant |
| 11,200 | ||
FQP50N06![]() | Fairchild Semiconductor Corporation | MOSFET N-CH 60V 50A TO-220 RoHS : Compliant |
| 6,100 | ||
FQP50N06L![]() | Fairchild Semiconductor Corporation | MOSFET N-CH 60V 52.4A TO-220 RoHS : Compliant |
| 4,000 | ||
| RFP50N06 | Fairchild Semiconductor Corporation | MOSFET N-CH 60V 50A TO-220AB RoHS : Compliant |
| 2,400 | ||
| SUD50N06-09L | Vishay Huntington | N-Channel 60-V (D-S), 175C MOSFET, Logic Level |
| 2,300 | ||
| SUD50N06-09L-T4-E3 | Vishay Huntington |
| 2,160 | |||
| SUD50N06-09L-E3 | Vishay Huntington | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK / MOSFET N-CH 60V 50A TO252 |
| 451 | ||
FQB50N06![]() | Fairchild Semiconductor Corporation | 60V N-Channel MOSFET RoHS : Not Compliant |
| 355 | ||
FQB50N06LTM![]() | Fairchild Semiconductor Corporation | MOSFET N-CH 60V 52.4A D2PAK RoHS : Compliant |
| 330 | ||
FQB50N06L![]() | Fairchild Semiconductor Corporation | 60V LOGIC N-Channel MOSFET RoHS : Not Compliant |
| 320 |
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