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H63V1CD-R Distributor |
| Distributor | Part # | Manufacturer | Description | Price | Qty. BuyNow | |
![]() TME | BSS316NH6327XTSA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23 RoHS : Compliant |
| 5,698 | |
| BFR380FH6327 | Infineon Technologies AG | Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3 |
| 5,523 | ||
| BFP 840FESD H6327 | Infineon Technologies AG | Transistor: NPN; 35mA |
| 2,990 | ||
| BSR315PH6327XTSA1 | Infineon Technologies AG | Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59 RoHS : Compliant |
| 2,969 | ||
| BSS126H6327XTSA2 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 RoHS : Compliant |
| 1,887 | ||
| BCR135SH6327 | Infineon Technologies AG | Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363 |
| 632 | ||
| BSS225H6327FTSA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89 RoHS : Compliant |
| 462 | ||
| 02011A4PH63 | FATH | Document pocket; green; Size: A4 |
| 10 | ||
| MMS-63S MEH-63 | LS Electric | Door coupling rotary handle |
| 0 | ||
| SEH 63-4B | Besel SA | Motor: AC; 1-phase; 0.18kW; 230VAC; 1400rpm; 1.23Nm; IP54; 1.5A; arms |
| 0 | ||
| SEMH63-4C | Besel SA | Motor: AC; 1-phase; 0.18kW; 230VAC; 1320rpm; 1.3Nm; IP54; 1.8A; arms |
| 0 | ||
| BBY6602VH6327XTSA1 | Infineon Technologies AG | Diode: varicap; 12V; 50mA; SC79; single diode; reel,tape RoHS : Compliant |
| 0 | ||
| BCM846SH6327XTSA1 | Infineon Technologies AG | Transistor: NPN RoHS : Compliant |
| 0 | ||
| BCR400WH6327XTSA1 | Infineon Technologies AG | IC: driver; SOT343; 10mA; 330mW; 1.6÷18VDC; active bias controller RoHS : Compliant |
| 0 | ||
| BFP650H6327XTSA1 | Infineon Technologies AG | Transistor: NPN; bipolar RoHS : Compliant |
| 0 | ||
![]() ComSIT USA | BSR92PH6327XTSA1 | AVAILABLE EU | 4,425 | |||
| BSS126H6327 | AVAILABLE EU | 1,979 | ||||
| EMVH630ARA100MF80GA | United Chemi-Con Inc | AVAILABLE EU | 69,965 | |||
| BCP5216H6327 | AVAILABLE EU | 99,000 | ||||
| BSS138NH6327 | Infineon Technologies AG | AVAILABLE EU RoHS : Compliant | 72,000 | |||
![]() ComSIT USA | BCR116WH6327 | Infineon Technologies AG | NPN SILICON DIGITAL TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon RoHS : Compliant | 1,057,965 | ||
| CPH6328TLE | onsemi | Transistor RoHS : Compliant | 69,000 | |||
| BC858BWH6327 | Infineon Technologies AG | PNP SILICON AF TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon RoHS : Compliant | 27,000 | |||
| SFH6325X009T | Vishay Intertechnologies | Logic IC Output Optocoupler, 2-Channel, 2-Element, 5300V Isolation, 1MBps RoHS : Compliant | 26,000 | |||
| BCP5416H6327 | Infineon Technologies AG | NPN SILICON AF TRANSISTOR Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin RoHS : Compliant | 23,000 | |||
| 2N7002H6327 | Infineon Technologies AG | OPTIMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 9,000 | |||
| D102K20Y5PH63L2R | Vishay Intertechnologies | Ceramic Capacitor, Ceramic, 100V, 10% +Tol, 10% -Tol, Y5P, 10% TC, 0.001uF, Through Hole Mount RoHS : Not Compliant | 7,000 | |||
| BAS28WH6327 | Infineon Technologies AG | SILICON SWITCHING DIODE Rectifier Diode, 85V V(RRM), Silicon RoHS : Compliant | 6,000 | |||
| BCR141WH6327 | Infineon Technologies AG | NPN SILICON DIGITAL TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon RoHS : Compliant | 3,610 | |||
| BFR360FH6327 | Infineon Technologies AG | NPN SILICON RF TRANSISTOR RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN RoHS : Compliant | 3,000 | |||
| SFH6345 | Vishay Intertechnologies | 15 KV PER MICRO SECOND , 1 MEGA BAUD, HIGH NOISE IMMUNITY, ANALOG HIGH SPEED COUPLER Logic IC Output Optocoupler, 1-Channel, 1-Element, 5300V Isolation, 1MBps RoHS : Not Compliant | 1,739 | |||
BSP297H6327![]() | Infineon Technologies AG | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 1,520 | |||
| BSS606NH6327XTSA1 | Infineon Technologies AG | Small Signal Field-Effect Transistor, 3.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 560 | |||
| SFH636X007T | Vishay Intertechnologies | Logic IC Output Optocoupler, 1-Channel, 1-Element, 5300V Isolation, 1MBps RoHS : Compliant | 280 | |||
| BSP295H6327 | Infineon Technologies AG | SIPMOS SMALL-SIGNAL-TRANSISTOR Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 175 | |||
![]() NexGen Digital | BSS83PH6327XTSA1 | Infineon Technologies AG | RoHS : Compliant | 700 | ||
| BSS192PH6327FTSA1 | Infineon Technologies AG | RoHS : Compliant | 204 | |||
| KMH63VN182M22X30T2 | United Chemi-Con Inc | 150 | ||||
| CPH6341-TL-E | onsemi | RoHS : Compliant | 29 | |||
![]() PUI | GEH63A115 | 1 | ||||
![]() Rutronik | BAS7004SH6327XTSA1 | Infineon Technologies AG | SCHOTTKY DIODE 0,07A 70V SOT323 RoHS : Compliant |
| 216,000 | |
| BC847CWH6327XTSA1 | Infineon Technologies AG | NPN TRANSISTOR 45V 0,1A SOT323 RoHS : Compliant |
| 90,000 | ||
BSL215CH6327XTSA1![]() | Infineon Technologies AG | NPCH +-20V +-1,5A 150mOhm TSOP6 RoHS : Compliant |
| 21,000 | ||
| BAT5404WH6327XTSA1 | Infineon Technologies AG | SCHOTTKY-DIODE 0,2A 30V SOT323 RoHS : Compliant |
| 15,000 | ||
| BCR10PNH6327XTSA1 | Infineon Technologies AG | NPN PNP DIGI-TR.10K/10K SOT363 RoHS : Compliant |
| 15,000 | ||
| BCR133WH6327XTSA1 | Infineon Technologies AG | NPN DIGI-TRANS.10K/10K SOT323 RoHS : Compliant |
| 9,000 | ||
| BCR22PNH6327XTSA1 | Infineon Technologies AG | NPN PNP DIGI-TRAN.22/22K SOT363 RoHS : Compliant |
| 9,000 | ||
| BSP129H6327XTSA1 | Infineon Technologies AG | N-CH Depletion MOS 240V SOT223 RoHS : Compliant |
| 8,000 | ||
| BC847BWH6327XTSA1 | Infineon Technologies AG | NPN TRANSISTOR 45V 0,1A SOT323 RoHS : Compliant |
| 6,000 | ||
| BSD316SNH6327XTSA1 | Infineon Technologies AG | N-CH 30V 1,4A 120mOhm SOT-363 RoHS : Compliant |
| 6,000 | ||
| BK1-S505H-6-3-R | Eaton Electronics | 6.3A 250V slow ceramic RoHS : Compliant |
| 5,000 | ||
BSL308PEH6327XTSA1![]() | Infineon Technologies AG | DUAL P-CH 30V 2A 62mOhm TSOP-6 RoHS : Compliant |
| 3,000 | ||
| BSL316CH6327XTSA1 | Infineon Technologies AG | N/P-CH 30V 1,4A 150mOhm TSOP6 RoHS : Compliant |
| 3,000 | ||
| BCV48H6327XTSA1 | Infineon Technologies AG | PNP DARLINGTON 60V 0,5A SOT89 RoHS : Compliant |
| 1,000 | ||
| BSP125H6327XTSA1 | Infineon Technologies AG | N-CH MOS-FET 0,12A 600V SOT223 RoHS : Compliant |
| 1,000 | ||
![]() Avnet Silica | MPXH6300A6U | STMicroelectronics | (Alt: MPXH6300A6U) RoHS : Compliant | 0 | ||
| MCH6351-TL-W | onsemi | Single PChannel Power MOSFET 12V 9A 169 mO (Alt: MCH6351-TL-W) RoHS : Compliant | 0 | |||
| MCH6341-TL-W | onsemi | Single PChannel Power MOSFET 30V 5A 59mO (Alt: MCH6341-TL-W) RoHS : Compliant | 0 | |||
| CPH6350-TL-W | onsemi | PChannel Power MOSFET 30V 6A 43mO (Alt: CPH6350-TL-W) RoHS : Compliant | 0 | |||
| RRH63000-A1R | Renesas Electronics Corporation | PRESSURE RELATIVE HUMIDITY TEMPERATUR (Alt: RRH63000-A1R) RoHS : Compliant | 0 | |||
| MTCH6303-I/PT | Microchip Technology Inc | Sensor Controller Capacitive 27CH 64Pin TQFP Tray (Alt: MTCH6303-I/PT) RoHS : Compliant | 0 | |||
| MPXH6300AC6T1 | STMicroelectronics | (Alt: MPXH6300AC6T1) RoHS : Compliant | 0 | |||
| MTCH6301T-I/ML | Microchip Technology Inc | Capacitive Touch Controller 44Pin QFN EP TR (Alt: MTCH6301T-I/ML) RoHS : Compliant | 0 | |||
| MTCH6303T-I/PT | Microchip Technology Inc | Sensor Controller Capacitive 27CH 64Pin TQFP TR (Alt: MTCH6303T-I/PT) RoHS : Compliant | 0 | |||
| DMTH63M5LFGQ-13 | Diodes Incorporated | (Alt: DMTH63M5LFGQ-13) RoHS : Compliant | 0 | |||
| DMTH63M6LPSW-13 | Diodes Incorporated | (Alt: DMTH63M6LPSW-13) RoHS : Compliant | 0 | |||
| NB3H63143G00MNG | onsemi | (Alt: NB3H63143G00MNG) RoHS : Compliant | 0 | |||
| NTMFS5H630NLT1G | onsemi | Single NChannel Power MOSFET 60V 120A 31mO Single N Channel Power MOSFET 60V 120A 31mO (Alt: NTMFS5H630NLT1G) RoHS : Compliant | 0 | |||
| MM912H634DV1AER2 | NXP Semiconductors | MCU 16Bit S12 CISC 64KB Flash 48Pin LQFP EP TR (Alt: MM912H634DV1AER2) RoHS : Compliant | 0 | |||
| DMTH63M6LPSWQ-13 | Diodes Incorporated | (Alt: DMTH63M6LPSWQ-13) RoHS : Compliant | 0 | |||
![]() Chip-Germany GmbH | BSS214NH6327XTSA1 | Infineon Technologies AG | RoHS : Compliant | 187,379 | ||
| BSS205NH6327XTSA1 | Infineon Technologies AG | RoHS : Compliant | 62,580 | |||
| BSS806NH6327XTSA1-ND | Infineon Technologies AG | 39,000 | ||||
| 2N7002DWH6327XTSA1 | Infineon Technologies AG | RoHS : Compliant | 7,512 | |||
| BSS670S2LH6327XTSA | Infineon Technologies AG | 6,786 | ||||
| BSS223PWH6327XTSA1 | Infineon Technologies AG | RoHS : Compliant | 4,980 | |||
| BSS83PH6327XTSA1 | Infineon Technologies AG | RoHS : Compliant | 4,430 | |||
| BSP318SH6327XTSA1 | Infineon Technologies AG | RoHS : Compliant | 3,809 | |||
| BSS138NH6327XTSA2 | Infineon Technologies AG | RoHS : Compliant | 2,900 | |||
| BSS127H6327XTSA2 | Infineon Technologies AG | RoHS : Compliant | 1,882 | |||
| BSP320SH6327XTSA1 | Infineon Technologies AG | RoHS : Compliant | 1,574 | |||
| BSS119NH6327XTSA1 | Infineon Technologies AG | RoHS : Compliant | 355 | |||
| ESMH630VSN223MA80T | Chemi-Con | RoHS : Compliant | 200 | |||
![]() EBV Elektronik | BSS816NWH6327XTSA1 | Infineon Technologies AG | Power MOSFET N Channel 20 V 14 A 160 Milliohms SOT323 3 Pins Surface Mount (Alt: SP000917562) RoHS : Compliant | 426,000 | ||
| BSL307SPH6327XTSA1 | Infineon Technologies AG | Trans MOSFET PCH 30V 55A 6Pin TSOP TR (Alt: SP001100660) RoHS : Compliant | 330,000 | |||
| BAT6406WH6327XTSA1 | Infineon Technologies AG | Diode Schottky 40V 025A 3Pin SOT323 TR (Alt: SP000749842) RoHS : Compliant | 315,000 | |||
| BSS126H6327XTSA2 | Infineon Technologies AG | (Alt: SP000919334) RoHS : Compliant | 201,000 | |||
| BSD235CH6327XTSA1 | Infineon Technologies AG | Dual MOSFET Complementary N and P Channel 20 V 20 V 950 mA 950 mA 0266 ohm (Alt: SP000917610) RoHS : Compliant | 198,000 | |||
| BSP92PH6327XTSA1 | Infineon Technologies AG | Trans MOSFET PCH 250V 026A 4Pin SOT223 TR (Alt: SP001058796) RoHS : Compliant | 66,000 | |||
| BFP650H6327XTSA1 | Infineon Technologies AG | (Alt: SP000750406) RoHS : Compliant | 48,000 | |||
| BCR135WH6327XTSA1 | Infineon Technologies AG | Trans Digital BJT NPN 50V 100mA 3Pin SOT323 TR (Alt: SP000756252) RoHS : Compliant | 21,000 | |||
| BSL211SPH6327XTSA1 | Infineon Technologies AG | Trans MOSFET PCH 20V 47A 6Pin TSOP TR (Alt: SP001100652) RoHS : Compliant | 21,000 | |||
| BCR133WH6327XTSA1 | Infineon Technologies AG | Trans Digital BJT NPN 50V 100mA 3Pin SOT323 TR (Alt: SP000756246) RoHS : Compliant | 12,000 | |||
| BFS483H6327XTSA1 | Infineon Technologies AG | Bipolar RF Transistor Dual NPN 12 V 8 GHz 450 mW 65 mA SOT363 (Alt: SP000750464) RoHS : Compliant | 9,000 | |||
| BDP947H6327XTSA1 | Infineon Technologies AG | Trans GP BJT NPN 45V 3A 4Pin SOT223 TR (Alt: SP000748376) RoHS : Compliant | 4,000 | |||
| BSS225H6327FTSA1 | Infineon Technologies AG | Power MOSFET N Channel 600 V 90 mA 28 ohm SOT89 Surface Mount (Alt: SP001047644) RoHS : Compliant | 4,000 | |||
BSP324H6327XTSA1![]() | Infineon Technologies AG | Trans MOSFET NCH 400V 017A 4Pin SOT223 TR (Alt: SP001058786) RoHS : Compliant | 2,000 | |||
| BDP954H6327XTSA1 | Infineon Technologies AG | (Alt: SP000748528) RoHS : Compliant | 1,000 | |||
![]() Maritex | BCP5316H6327XTSA1 | Infineon Technologies AG | Bipolar Transistors (BJT); BCP5316H6327XTSA1; INFINEON TECHNOLOGIES; PNP; 2 V; 100 mA RoHS : Compliant |
| 48,780 | |
BSS806NEH6327XTSA1![]() | Infineon Technologies AG | MOSFETs; BSS806NEH6327XTSA1; INFINEON TECHNOLOGIES; 20 V; 2.3 A; 8 V; 500 mW RoHS : Compliant |
| 20,542 | ||
| BSP125H6327XTSA1 | Infineon Technologies AG | MOSFETs; BSP125H6327XTSA1; INFINEON TECHNOLOGIES; 600 V; 120 mA; 20 V; 1.8 W RoHS : Compliant |
| 18,603 | ||
| BSP135H6327XTSA1 | Infineon Technologies AG | MOSFETs; BSP135H6327XTSA1; INFINEON TECHNOLOGIES; 600 V; 120 mA; 20 V; 1.8 W RoHS : Compliant |
| 9,257 | ||
| BSL606SNH6327XTSA1 | Infineon Technologies AG | MOSFETs; BSL606SNH6327XTSA1; INFINEON TECHNOLOGIES; 60 V; 4.5 A; 20 V; 2 W RoHS : Compliant |
| 8,729 | ||
| BSP149H6327XTSA1 | Infineon Technologies AG | MOSFETs; BSP149H6327XTSA1; INFINEON TECHNOLOGIES; 200 V; 660 mA; 20 V; 1.8 W RoHS : Compliant |
| 1,370 | ||
| BFS481H6327XTSA1 | Infineon Technologies AG | Bipolar Transistors (BJT); BFS481H6327XTSA1; INFINEON TECHNOLOGIES; NPN; 6; 12 V; 20 mA RoHS : Compliant |
| 789 | ||
| BSL215C H6327 | Infineon Technologies AG | MOSFETs; BSL215C H6327; INFINEON TECHNOLOGIES; 20 V; 1.5 A; 12 V; 500 mW |
| 191 | ||
| BSP170PH6327 | Infineon Technologies AG | Transistor: P-MOSFET; unipolar; -60V; -1.9A; 0.3ohm; 1.8W; -55+150 deg.C; SMD; SOT223; AEC-Q100 RoHS : Compliant |
| 100 | ||
| BSL606SNH6327XTSA1-VB | VBsemi Electronics Co Ltd | MOSFETs; BSL606SNH6327XTSA1-VB; VBSEMI |
| 50 | ||
| BSP149 H6327 | Infineon Technologies AG | MOSFETs; BSP149 H6327; INFINEON TECHNOLOGIES; 200 V; 660 mA; 20 V; 1.8 W |
| 33 | ||
| 2N7002DWH6327XTSA1-VB | VBsemi Electronics Co Ltd | MOSFETs; 2N7002DWH6327XTSA1-VB; VBSEMI |
| 20 | ||
| 2N7002DWH6327XTSA1 | Infineon Technologies AG | MOSFETs; 2N7002DWH6327XTSA1; INFINEON TECHNOLOGIES; 60 V; 300 mA; 20 V; 500 mW RoHS : Compliant |
| 7 | ||
| BFP840ESDH6327XTSA1 | Infineon Technologies AG | Bipolar Transistors (BJT); BFP840ESDH6327XTSA1; INFINEON TECHNOLOGIES; NPN; 4; 2.25 V; 35 mA RoHS : Compliant |
| 4 | ||
| BSP125 H6327 | Infineon Technologies AG | MOSFETs; BSP125 H6327; INFINEON TECHNOLOGIES; 600 V; 120 mA; 20 V; 1.8 W |
| 3 | ||
![]() Neutron USA | GEH63A315 | Carlo Gavazzi Holding AG | Relay Sockets & Hardware HANDLE GMS-63 315MM |
| 0 | |
| MMS-63H-63A | Altech Corporation | Motor Drives Manual Motor Starte, Type E |
| 0 | ||
![]() TE Connectivity | SBCH633RJ | TE Connectivity | SBCH 6 33R 5% Resistance Value: 33 Ω Element Type: Wire Wound Resistor Type: Power Resistor Passive Component Tolerance: 5 % Power Rating: 7 W Wirewound Resistor: Axial Mount & 17 Watt | 33 Ω Wire Wound Power Resistor 5 % | Part Number: SBCH633RJ | Internal Number: 1623726-5 | TE Connectivity RoHS : Compliant |
| 728 | |
![]() Vyrian | ESD5V0S5USH6327XTSA1 | Infineon Technologies AG | Trans Voltage Suppressor Diode, 130W, 5.3V V(RWM), Unidirectional, 5 Element, Silicon RoHS : Compliant | 12,987 | ||
| CPH6347-TL-W | onsemi | Power Field-Effect Transistor, 6A I(D), 20V, 0.039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 11,395 | |||
BSL205NH6327XTSA1![]() | Infineon Technologies AG | Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 10,810 | |||
BSP179H6327XTSA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 0.21A I(D), 400V, 18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 9,452 | |||
| BFP640FESDH6327XTSA1 | Infineon Technologies AG | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN RoHS : Compliant | 8,879 | |||
| BCR133WH6327XTSA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon RoHS : Compliant | 8,869 | |||
| BFQ19SH6327XTSA1 | Infineon Technologies AG | RF Small Signal Bipolar Transistor, 0.21A I(C), 1-Element, L Band, Silicon, NPN, TO-243 RoHS : Compliant | 8,109 | |||
| BFP540H6327XTSA1 | Infineon Technologies AG | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN RoHS : Compliant | 7,458 | |||
| BBY5302WH6327XTSA1 | Infineon Technologies AG | Variable Capacitance Diode, Ultra High Frequency, 5.3pF C(T), 6V, Silicon, Hyperabrupt | 6,116 | |||
| MM912H634DV1AER2 | NXP Semiconductors | Analog Circuit RoHS : Compliant | 5,887 | |||
| BG3123RH6327XTSA1 | Infineon Technologies AG | RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 5,867 | |||
| BGA428H6327XTSA1 | Infineon Technologies AG | Narrow Band Low Power Amplifier RoHS : Compliant | 5,228 | |||
LMH6321TSX![]() | Texas Instruments | Buffer Amplifier, 1 Func, PSSO7 RoHS : Not Compliant | 4,553 | |||
| BSP295H6327XTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 3,947 | |||
| MPXH6300AC6U | NXP Semiconductors | Piezoresistive Sensor, Absolute, 3Psi Min, 42Psi Max, 1.50%, 0.30-4.90V, Square, Surface Mount RoHS : Compliant | 669 | |||
![]() Win Source Electronics | BSS169H6327XTSA1 | Infineon Technologies AG | MOSFET N-CH 100V 170MA SOT23 RoHS : Compliant |
| 480,840 | |
| BFP420H6327XTSA1 | Infineon Technologies AG | TRANS RF NPN 25GHZ 4.5V SOT343 RoHS : Compliant |
| 146,910 | ||
| BSS131 H6327 | Infineon Technologies AG | MOSFET N-CH 240V 0.11A SOT23 |
| 120,800 | ||
| BSS119N H6327 | Infineon Technologies AG |
| 108,626 | |||
| BSD235NH6327 | Infineon Technologies AG | Trans MOSFET N-CH 20V 0.95A Automotive 6-Pin SOT-363 T/R RoHS : Compliant |
| 72,850 | ||
| BFP840FESDH6327XTSA1 | Infineon Technologies AG | IC TRANSISTOR RF NPN TSFP-4 RoHS : Compliant |
| 60,000 | ||
| BFR 181W H6327 | Infineon Technologies AG | RF Bipolar Transistors RF BIP TRANSISTOR |
| 54,650 | ||
| BSP295H6327XTSA1 | Infineon Technologies AG | MOSFET N-CH 60V 1.8A SOT223 RoHS : Compliant |
| 51,140 | ||
| BSL215C H6327 | Infineon Technologies AG | MOSFETs SMALL SIGNAL+P-CH |
| 48,000 | ||
| BSP295 H6327 | Infineon Technologies AG | Trans MOSFET N-CH 60V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R |
| 45,000 | ||
| BSS816NWH6327XTSA1 | Infineon Technologies AG | MOSFET N-CH 20V 1.4A SOT323 RoHS : Compliant |
| 32,612 | ||
| BFP540H6327XTSA1 | Infineon Technologies AG | TRANS RF NPN 4.5V 80MA SOT343 RoHS : Compliant |
| 30,000 | ||
| BFQ19SH6327XTSA1 | Infineon Technologies AG | TRANSISTOR RF NPN 15V SOT-89 RoHS : Compliant |
| 28,120 | ||
| BFP450H6327 | Infineon Technologies AG | High Linearity Silicon Bipolar RF Transistor |
| 21,000 | ||
| BFP740ESDH6327 | Infineon Technologies AG |
| 19,150 | |||
![]() Wuhan P&S | BFP420H6327 | Infineon Technologies AG | 4.5V,60mA,Bipolar RF NPN Transistor RoHS : Compliant |
| 6,000 |
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