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S2L-C4-R Distributor |
| Distributor | Part # | Manufacturer | Description | Price | Qty. BuyNow | |
![]() NexGen Digital | STPS2L60AY | STMicroelectronics | RoHS : Compliant | 10,000 | ||
![]() Rutronik | IPD15N06S2L64ATMA2![]() | Infineon Technologies AG | N-CH 55V 19A 64mOHm TO252 RoHS : Compliant |
| 70,000 | |
| IPD22N08S2L50ATMA1 | Infineon Technologies AG | N-CH 75V 22A 50mOhm TO252 RoHS : Compliant |
| 5,000 | ||
| IPD26N06S2L35ATMA2 | Infineon Technologies AG | N-CH 55V 30A 35mOhm TO252 RoHS : Compliant |
| 2,500 | ||
| IPD30N08S2L21ATMA1 | Infineon Technologies AG | MOSFET 75V 21.0mOHM AECQ TO252 RoHS : Compliant |
| 2,500 | ||
IPB160N04S2L03ATMA2![]() | Infineon Technologies AG | N-CH 40V 160A 2,7mOHm TO263-7 RoHS : Compliant |
| 1,000 | ||
IPB80N06S2L07ATMA3![]() | Infineon Technologies AG | N-CH 55V 80A 6.7mOHM TO263 RoHS : Compliant |
| 1,000 | ||
| VS-3C05ET12S2L-M3 | Vishay Intertechnologies | SiC-DIODE 1200V 5A 1.35V TO-263AB 2L RoHS : Compliant |
| 25 | ||
| VS-3C10ET12S2L-M3 | Vishay Intertechnologies | SiC-DIODE 1200V 10A 1.35V TO-263AB 2L RoHS : Compliant |
| 25 | ||
| VS-3C15ET12S2L-M3 | Vishay Intertechnologies | SiC-DIODE 1200V 15A 1.35V TO-263AB 2L RoHS : Compliant |
| 25 | ||
| VS-3C20ET12S2L-M3 | Vishay Intertechnologies | SiC-DIODE 1200V 20A 1.35V TO-263AB 2L RoHS : Compliant |
| 25 | ||
![]() DB Roberts | KN5C----5S2L-21 | Essentra Components | CLAMPING STAR KNOB 1.380 IN DI | 0 | ||
| KN4C----5S2L-21 | Essentra Components | CLAMPING STAR KNOB 1.380 IN DI | 0 | |||
![]() FDH Electronics | 6LS2-L | Honeywell Sensing and Control | Switches RoHS : Compliant |
| 0 | |
![]() Flip Electronics | AP0100CS2L00SUGA0-DR | onsemi | Stock, Ship Today |
| 38,177 | |
MK2308S-2LFT![]() | Integrated Device Technology Inc | Stock RoHS : Compliant | 36,402 | |||
MK2308S-2LF![]() | Integrated Device Technology Inc | Stock, Ship Today RoHS : Compliant |
| 36,402 | ||
| AP0100CS2L00SUGA0-DR1 | onsemi | Stock, Ship Today RoHS : Compliant |
| 7,561 | ||
| AP0101CS2L00SPGA0-DR1 | onsemi | Stock, Ship Today RoHS : Compliant |
| 6,528 | ||
| AFT18P350-4S2LR6 | NXP Semiconductors | Stock, Ship Today RoHS : Compliant |
| 150 | ||
![]() Maritex | STPS2L60A![]() | STMicroelectronics | Rectifier Diodes & Bridges; STPS2L60A; STMICROELECTRONICS; 100 �A; 2 A; 2; 75 A RoHS : Compliant |
| 55,935 | |
STPS2L30A![]() | STMicroelectronics | Rectifier Diodes & Bridges; STPS2L30A; STMICROELECTRONICS; 200 �A; 2 A; 2; 75 A RoHS : Compliant |
| 22,577 | ||
| IPG20N06S2L-35 | Infineon Technologies AG | MOSFETs; IPG20N06S2L-35; INFINEON TECHNOLOGIES; 55 V; 20 A; 20 V; 65 W RoHS : Compliant |
| 3,779 | ||
| BSS670S2L | VBsemi Electronics Co Ltd | MOSFETs; BSS670S2L; VBSEMI; 55 V; 540 mA; 20 V; 360 mW |
| 2,997 | ||
STPS2L25U![]() | STMicroelectronics | Rectifier Diodes & Bridges; STPS2L25U; STMICROELECTRONICS; 90 �A; 2 A; 2; 75 A RoHS : Compliant |
| 2,047 | ||
| IPD15N06S2L-64 | VBsemi Electronics Co Ltd | MOSFETs; IPD15N06S2L-64; VBSEMI; 55 V; 47 W |
| 1,880 | ||
| IPG20N06S2L-35-VB | VBsemi Electronics Co Ltd | MOSFETs; IPG20N06S2L-35-VB; VBSEMI |
| 50 | ||
| BSS670S2L H6327 | Infineon Technologies AG | MOSFETs; BSS670S2L H6327; INFINEON TECHNOLOGIES; 55 V; 540 mA; 20 V; 360 mW |
| 2 | ||
![]() Vyrian | D6V3H1US2LP4-7B | Diodes Incorporated | Trans Voltage Suppressor Diode, 500W, 6.3V V(RWM), Unidirectional, 1 Element, Silicon | 16,483 | ||
| IPP100N06S2L05AKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 55V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 12,611 | |||
IPB100N04S2L03ATMA2![]() | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 12,103 | |||
SPP80N06S2L-05![]() | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 9,930 | |||
| IPD30N03S2L07ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 30A I(D), 30V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 9,826 | |||
SPP80N03S2L-03![]() | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 9,379 | |||
LIS2L02AL![]() | STMicroelectronics | Analog Circuit, 1 Func, CMOS, PBGA8 RoHS : Compliant | 8,070 | |||
| S2-LPTXQTR | STMicroelectronics | RF and Baseband Circuit RoHS : Compliant | 7,439 | |||
| BLS4G3D1609ES2LX0 | Micron Technology Inc | 7,068 | ||||
| IPB80N08S2L07ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 5,958 | |||
IPP80N06S2LH5AKSA2![]() | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 5,723 | |||
IPP80N06S2L07AKSA2![]() | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 5,711 | |||
| KHX4200S2LL/2G | Kingston Technology Company | 5,142 | ||||
SPI100N03S2L-03![]() | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant | 4,126 | |||
| S2-L2-DC12V | Panasonic Electronic Components | Electromechanical Relay, Latched, 22VDC (Coil), 3A (Contact), 30VDC (Contact), Random, AC/DC Output | 740 |
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