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TPH-16A-R/ Distributor
DistributorPart #ManufacturerDescriptionPriceQty.
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ComSIT USA		1SV270TPH3F

 Toshiba America Electronic Components SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE Variable Capacitance Diode, Ultra High Frequency, 16pF C(T), 10V, Silicon
RoHS : Compliant
66,890
02DZ7V5YTPH3F

 Toshiba America Electronic Components Electronic Component
RoHS : Compliant
45,000
QLMTPH49ST014S

 Agilent Technologies Inc Electronic Component
RoHS : Not Compliant
34,730
TPH1R104PBL1HKQ0

 Toshiba America Electronic Components MOSFET, 40V, 100A, N-channel, Toshiba
RoHS : Compliant
15,000
02DZ36ZTPH3F

 Toshiba America Electronic Components Zener Diode, 2.5%, 0.2W, Silicon, Unidirectional
RoHS : Compliant
12,000
TPHR6503PLL1QM

 Toshiba America Electronic Components Trans MOSFET N-CH Si 30V 393A 8-Pin SOP Advance T/R
RoHS : Compliant
10,520
1SV271TPH3

 Toshiba America Electronic Components Pin Diode, 50V V(BR)
RoHS : Not Compliant
5,880
TPH12008NHL1QM

 Toshiba America Electronic Components MOSFET SILICON N-CHANNEL MOS (U-MOSVIII-H) Power Field-Effect Transistor, 44A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS : Compliant
5,000
TPH4R606NHL1QM

 Toshiba America Electronic Components MOSFET SILICON N-CHANNEL MOS (U-MOSVIII-H) Power Field-Effect Transistor, 32A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS : Compliant
5,000
TPH4R10ANLL1QM

 Toshiba America Electronic Components MOSFET SILICON N-CHANNEL MOS (U-MOSVIII-H) Power Field-Effect Transistor
RoHS : Compliant
5,000
TPH6R30ANLL1QM

 Toshiba America Electronic Components MOSFET SILICON N-CHANNEL MOS (U-MOSVIII-H) Small Signal Field-Effect Transistor, 66A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS : Compliant
5,000
02DZ18YTPH3F

 Toshiba America Electronic Components SILICON EPITAXIAL PLANAR TYPE DIODE Zener Diode, 17.95V V(Z), 2.5%, 0.2W, Silicon, Unidirectional
RoHS : Compliant
3,000
02DZ10ZTPH3F

 Toshiba America Electronic Components SILICON EPITAXIAL PLANAR TYPE DIODE Zener Diode, 10.33V V(Z), 2.5%, 0.2W, Silicon, Unidirectional
RoHS : Compliant
3,000
1SV229TPH3F

 Toshiba America Electronic Components VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Variable Capacitance Diode, Ultra High Frequency, 15pF C(T), 15V, Silicon, Abrupt
RoHS : Compliant
3,000
QLMTPH49ST014T

 Agilent Technologies Inc Electronic Component
RoHS : Not Compliant
2,110

Rutronik		TPH3R704PL,L1Q(M

 Toshiba America Electronic Components N-CH 40V 92A 3mOhm SOPAdvance
RoHS : Compliant
5,000 : $0.629
10,000 : $0.5931
15,000 : $0.5032
25

Chip 1 Exchange		TPH3R704PL,L1Q

 Toshiba America Electronic Components INSTOCK
3,759
1SS357-TPH3

 INSTOCK
1,156
HY57V561620FTP-HDR-C

 INSTOCK
672
TPH8R008NH,L1Q(M

 Toshiba America Electronic Components INSTOCK
50

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