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W2TG0-3D3-R2/UL Distributor |
| Distributor | Part # | Manufacturer | Description | Price | Qty. BuyNow | |
![]() Flip Electronics | NSRLV20MW2T1G | onsemi | Stock, Ship Today RoHS : Compliant | 39,000 | ||
![]() Maritex | LM7805L(W2) TO-220 | Unisonic Technologies Co Ltd | LDO Regulators; LM7805L(W2) TO-220; UTC |
| 350 | |
| LM7815L(W2) TO-220 | Unisonic Technologies Co Ltd | LDO Regulators; LM7815L(W2) TO-220; UTC |
| 82 | ||
![]() Venkel Ltd. | PLCC352820FYW2T | VENKEL LTD | PLCC LED;352820;Flat Lens;Yellow RoHS : Not Compliant | 0 | ||
| CTL1206FYW2T | VENKEL LTD | Chip Type LED;1206;Flat Lens;Yellow RoHS : Compliant | 0 | |||
![]() Vyrian | FP35R12W2T4B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 12,064 | ||
| FP25R12W2T4PB11BPSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 11,851 | |||
| FS100R12W2T7B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 11,795 | |||
| FP35R12W2T4PBPSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 11,788 | |||
| FS75R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 107A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 9,568 | |||
| FP25R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,776 | |||
| MEC5-040-01-L-RA-W2-TR | Samtec Inc | Card Edge Connector RoHS : Compliant | 8,481 | |||
| FP35R12W2T4PB11BPSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,206 | |||
| FP15R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES RoHS : Compliant | 8,023 | |||
| 9W2TM24P4H001 | SANYO Semiconductor Co Ltd | 6,100 | ||||
| FP25R12W2T4B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 5,788 | |||
MBT3904DW2T1![]() | onsemi | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon RoHS : Not Compliant | 5,575 | |||
| NSR1020MW2T1G-AU | onsemi | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon RoHS : Compliant | 774 | |||
| FP25R12W2T4 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 761 | |||
| FP25R12W2T4P_B11ENG | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 1200V V(BR)CES | 396 | |||
![]() Win Source Electronics | NSR0320MW2T1 | onsemi | DIODE SCHOTTKY 20V 1A SOD323 RoHS : Not Compliant |
| 247,040 | |
| NSR1020MW2T3G | onsemi | DIODE SCHOTTKY 20V 1A SOD323 RoHS : Compliant |
| 143,750 | ||
| NSR1020MW2T1G | onsemi | Rectifier Diode Schottky 1A 2-Pin SOD-323 T/R / DIODE SCHOTTKY 20V 1A SOD323 RoHS : Compliant |
| 142,840 | ||
| NSR0320MW2T3G | onsemi | Rectifier Diode Schottky 23V 1A 2-Pin SOD-323 T/R / DIODE SCHOTTKY 20V 1A SOD323 RoHS : Compliant |
| 131,860 | ||
| NSR0320MW2T1G | onsemi | DIODE SCHOTTKY 20V 1A SOD323 / Rectifier Diode Schottky 23V 1A 2-Pin SOD-323 T/R RoHS : Compliant |
| 126,680 | ||
| NSVR0320MW2T1G | onsemi | DIODE SCHOTTKY 20V 1A SOD323 RoHS : Compliant |
| 120,000 | ||
| WSB5543W-2/TR | Will Semiconductor Ltd | Middle Power Schottky Barrier Diode |
| 61,800 | ||
| ESD5601W-2/TR | Will Semiconductor Ltd |
| 14,443 | |||
| FP25R12W2T4 | Infineon Technologies AG | IGBT-Wechselrichter / IGBT-inverter RoHS : Compliant |
| 5,000 | ||
| NSVR1020MW2T1G | onsemi | DIODE SCHOTTKY 20V 1A SOD323 RoHS : Compliant |
| 700 | ||
| FP25R12W2T4BOMA1 | Infineon Technologies AG | IGBT MOD 1200V 39A 175W RoHS : Compliant |
| 355 |
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