DMN1053UCP4-7 datasheet(2/7 Pages) DIODES

2 / 7 page

DMN1053UCP4

Document number: DS38789 Rev. 2 - 2

2 of 7

www.diodes.com

July 2017

DMN1053UCP4

Maximum Ratings

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

8

Continuous Source Current @ VGS = 4.5V (Note 5)

TA = +25°C

TA = +70°C

2.7

2.2

Continuous Source Current @ VGS = 4.5V (Note 6)

TA = +25°C

TA = +70°C

4.0

3.2

Pulsed Drain Current (Pulse D

uration 10μs, Duty Cycle ≤1%)

IDM

Continuous Source-Drain Diode Current

0.74

Pulse Diode Forward Current

ISM

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

0.74

Thermal Resistance, Junction to Ambient (Note 5)

RJA

167

°C/W

Total Power Dissipation (Note 6)

1.34

Thermal Resistance, Junction to Ambient (Note 6)

RJA

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

1.0

µA

VDS = 9.6V, VGS = 0V

Gate-Body Leakage

IGSS

100

VGS = 8V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

0.35

0.5

0.7

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

110

Ω

VGS = 4.5V, ID = 1.0A

VGS = 2.5V, ID = 1.0A

VGS = 2.1V, ID = 1.0A

VGS = 1.8V, ID = 0.5A

VGS = 1.5V, ID = 0.2A

VGS = 1.2V, ID = 0.1A

Forward Transfer Admittance

|Yfs|

6.0

VDS = 6V, IS = 1.0A

Body Diode Forward Voltage

VSD

0.7

VGS = 0V, IS = 1.0A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

612

908

VDS = 6V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

127

Reverse Transfer Capacitance

Crss

126

Gate Resistance

1.3

2.6

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

7.2

VGS = 4.5V, VDS = 6V,

ID = 1.0A

Gate-Source Charge

Qgs

0.6

Gate-Drain Charge

Qgd

1.3

Turn-On Delay Time

tD(ON)

3.6

VDD = 6V, ID = 1.0A

VGEN = 4.5V, RG = 1Ω, RL = 6Ω

Turn-On Rise Time

6.0

Turn-Off Delay Time

tD(OFF)

13.5

Turn-Off Fall Time

Reverse Recovery Charge

QRR

0.7

1.5

IF = 1A, di/dt = 100A/μs

Body Diode Reverse Recovery Time

tRR

6.4

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

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