P-Channel Enhancement Mode MOSFET

Copyright  ANPEC Electronics Corp.

Rev. A.1 - July., 2002

APM3020P

www.anpec.com.tw

1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise

customers to obtain the latest version of relevant information to verify before placing orders.

Pin Description

Ordering and Marking Information

Features

Applications

Portable Equipment and Battery Powered

Systems

R

Symbol

Parameter

Rating

Unit

V

DSS

Drain-Source Voltage

-30

V

GSS

Gate-Source Voltage

±20

V

I

D

*

Maximum Drain Current – Continuous

-40

I

DM

Maximum Drain Current – Pulsed

-70

A

T

50

P

D

Maximum Power Dissipation

T

20

W

A P M 302 0P

H and ling C ode

Te m p. R a n g e

P a ckage C ode

P a ck age C ode

U : T O -2 5 2

O p erating Junction T e m p . R a nge

C : -55 to 125°C

H andling C ode

T U : T u b e

T R : T a p e & R e e l

A P M 3020P U :

A P M 3020P

XXX XX

XXX XX - D a te Co d e

Top View of TO-252

G

DS