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DMN3033LSN Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN3033LSN
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  5 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3033LSN Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN3033LSN
Document number: DS31116 Rev. 7 - 2
2 of 5
www.diodes.com
July 2016
© Diodes Incorporated
DMN3033LSN
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5)
TA = +25°C
TA = +70°C
ID
6
5
A
Pulsed Drain Current (Note 6)
IDM
24
A
Body-Diode Continuous Current (Note 5)
IS
2.25
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
1.4
W
Thermal Resistance, Junction to Ambient (Note 5) t
≤10s
RθJA
90
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
30
V
ID = 250µA, VGS = 0V
Zero Gate Voltage Drain Current
TJ = +25°C
TJ = +55°C
IDSS
1
5
µA
VDS = 30V, VGS = 0V
Gate-Body Leakage Current
IGSS
±100
nA
VDS = 0V, VGS = ±20V
Gate Threshold Voltage
VGS(TH)
1.0
2.1
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance (Note 7)
RDS(ON)
25
36
30
40
m
Ω
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
Forward Transconductance (Note 7)
gFS
5
S
VDS = 10V, ID = 8A
Diode Forward Voltage (Note 7)
VSD
0.7
1.1
V
IS = 2.25A, VGS = 0V
DYNAMIC PARAMETERS (Note 8)
Total Gate Charge
Qg
10.5
nC
VGS = 5V, VDS = 15V, ID = 6A
Gate-Source Charge
Qgs
3.8
nC
VGS = 10V, VDS = 15V, ID = 6A
Gate-Drain Charge
Qgd
2.9
nC
VGS = 10V, VDS = 15V, ID = 6A
Turn-On Delay Time
tD(ON)
11
ns
VDD = 15V, VGS = 10V,
RD = 1.8Ω, RG = 6Ω
Turn-On Rise Time
tR
7
ns
Turn-Off Delay Time
tD(OFF)
63
ns
Turn-Off Fall Time
tF
30
ns
Input Capacitance
Ciss
755
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
136
pF
Reverse Transfer Capacitance
Crss
108
pF
Notes:
5. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t
≤10s.
6. Repetitive Rating, pulse width limited by junction temperature.
7. Test pulse width t = 300ms.
8. Guaranteed by design. Not subject to production testing.



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