DMN62D0LFD

Document number: DS36359 Rev. 3 - 3

4 of 6

www.diodes.com

September 2017

© Diodes Incorporated

DMN62D0LFD

C

iss

f = 1MHz

C

oss

100

0

10

20

30

40

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Junction Capacitance

10

1

Q

(nC)

Figure 10 Gate Charge

0

2

4

6

8

10

0

0.2

0.4

0.6

0.8

1.0

1.2

V

= 10V

I =

A

DS

D

250m

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

t1, PULSE DURATION TIME (sec)

Figure 11 Transient Thermal Resistance

0.001

0.01

0.1

1

D = 0. 5

D = 0. 7

D = 0. 9

D = 0. 3

D = 0. 1

D = 0. 05

D = 0. 02

D = 0. 01

D = 0. 005

D = Single Pulse

R

(t) = r(t) * R

R

= 256°C/W

Duty Cycle, D = t1/ t2





JA

JA

JA

0.000001

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE (C)

Figure 7 Gate Threshold Variation vs. Junction Temperature

J



0.4

0.6

0.8

V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

G

S

(t

h

)

I

= 1mA

D

I = 250µA

D

1.0

1.2

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

I

,

S

O

U

R

C

E

C

U

R

R

E

N

T

(

A

)

S

0

0.1

0.2

0.3

0.4

0.5

0

0.3

0.6

0.9

1.2

1.5

T = 25°C

A

NOT RECOMMENDED FOR NEW DESIGN

USE DMN62D1LFD