DMN62D0U

Document number: DS38023 Rev. 2 - 2

2 of 7

www.diodes.com

August 2016

© Diodes Incorporated

DMN62D0U

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Steady

State

380

300

mA

t<5s

430

340

mA

Maximum Continuous Body Diode Forward Current (Note 6)

0.4

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)

1.2

A

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

380

mW

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

338

°C/W

t<5s

292

Total Power Dissipation (Note 6)

590

mW

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

216

°C/W

t<5s

177

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

60

—

—

V

Zero Gate Voltage Drain Current

—

—

1.0

µA

Gate-Source Leakage

—

—

±10

µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.5

—

1.0

V

Static Drain-Source On-Resistance

—

1.2

1.4

1.8

2.0

2.5

3.0

Ω

Forward Transconductance

—

1.8

—

S

Diode Forward Voltage

—

0.8

1.3

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

32

—

pF

f = 1.0MHz

Output Capacitance

—

3.9

—

pF

Reverse Transfer Capacitance

—

2.4

—

pF

Gate Resistance

—

101

—

Ω

Total Gate Charge

—

0.5

—

nC

Gate-Source Charge

—

0.09

—

nC

Gate-Drain Charge

—

0.09

—

nC

Turn-On Delay Time

—

2.4

—

ns

Turn-On Rise Time

—

2.5

—

ns

Turn-Off Delay Time

—

22.6

—

ns

Turn-Off Fall Time

—

12.5

—

ns

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6.

Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.