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DMN3200U Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN3200U Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page ![]() DMN3200U Document number: DS31188 Rev. 7 - 2 2 of 6 www.diodes.com May 2016 © Diodes Incorporated DMN3200U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±8 V Drain Current (Note 5) ID 2.2 A Pulsed Drain Current (Note 5) IDM 9 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 650 mW Thermal Resistance, Junction to Ambient RθJA 192 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS ±5 µA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) 0.45 1.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 62 70 150 90 110 200 m Ω VGS = 4.5V, ID = 2.2A VGS = 2.5V, ID = 2A VGS = 1.5V, ID = 0.67A Forward Transfer Admittance |Yfs| 5 S VDS = 5V, ID = 2.2A Diode Forward Voltage (Note 6) VSD 0.9 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss 290 pF VDS = 10V, VGS = 0V f = 1.0MHz Output Capacitance Coss 66 pF Reverse Transfer Capacitance Crss 35 pF Turn-On Delay Time tD(ON) 40.2 ns VDD = 10V, ID = 2A, VGEN = 4.5V, RL = 5Ω, RGEN = 6Ω Turn-On Rise Time tR 43.1 ns Turn-Off Delay Time tD(OFF) 471 ns Turn-Off Fall Time tF 104 ns Notes: 5. Device mounted on FR-4 PCB, on minimum recommended pad layout on 2oz. Copper pads. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. |
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