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DMN65D8L Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN65D8L Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DMN65D8L Document number: DS35923 Rev. 3 - 2 2 of 6 www.diodes.com January 2016 © Diodes Incorporated DMN65D8L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 310 240 mA Continuous Drain Current (Note 6) VGS = 5V Steady State TA = +25°C TA = +70°C ID 270 210 mA Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 800 mA Maximum Body Diode Continuous Current (Note 5) IS 500 mA Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) PD 370 mW (Note 5) 540 Thermal Resistance, Junction to Ambient (Note 6) RJA 348 °C/W (Note 5) 241 Thermal Resistance, Junction to Case (Note 5) RJC 91 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1.0 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS ±5 µA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1.2 2.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 2 3 VGS = 10V, ID = 0.115A 2.5 4 VGS = 5V, ID = 0.115A Forward Transconductance gFS 80 290 ms VDS = 10V, ID = 0.115A Diode Forward Voltage VSD 0.8 1.2 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 22.0 pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 3.2 Reverse Transfer Capacitance Crss 2.0 Gate Resistance Rg 79.9 VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge VGS = 10V Qg 0.87 nC VGS = 10V, VDS = 30V, ID = 150mA Total Gate Charge VGS = 4.5V Qg 0.43 Gate-Source Charge Qgs 0.11 Gate-Drain Charge Qgd 0.11 Turn-On Delay Time tD(ON) 2.7 ns VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25 Turn-On Rise Time tR 2.8 Turn-Off Delay Time tD(OFF) 12.6 Turn-Off Fall Time tF 7.3 Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing . |
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