DMN62D1LFD

Document number: DS36476 Rev. 2 - 2

2 of 7

www.diodes.com

July 2017

© Diodes Incorporated

DMN62D1LFD

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

400

310

mA

Pulsed Drain Current (Note 6)

1

A

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Power Dissipation (Note 5)

0.5

W

237

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

60

—

—

V

—

—

1

µA

Gate-Source Leakage

—

—

±100

nA

—

—

±500

nA

—

—

±2

µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.6

—

1

V

Static Drain-Source On-Resistance

—

0.8

2

Ω

—

1

2.5

—

1.4

3

—

1.8

—

Forward Transfer Admittance

—

1.8

—

S

Diode Forward Voltage

—

0.8

1.3

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

36

—

pF

f = 1MHz

Output Capacitance

—

4.6

—

Reverse Transfer Capacitance

—

3.6

—

Gate Resistance

—

59.8

—

Ω

Total Gate Charge

—

0.55

—

nC

Gate-Source Charge

—

0.08

—

Gate-Drain Charge

—

0.12

—

Turn-On Delay Time

—

2.1

—

ns

Turn-On Rise Time

—

2.8

—

ns

Turn-Off Delay Time

—

21

—

ns

Turn-Off Fall Time

—

13.9

—

ns

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.