DMN80H2D0SCTI

Document number: DS39151 Rev. 2 - 2

2 of 7

www.diodes.com

April 2017

© Diodes Incorporated

DMN80H2D0SCTI

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

800

V

Gate-Source Voltage

±30

V

Steady

State

7

4

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%) (Note 9)

28

A

Avalanche Current (Note 6)

L = 30mH

2.0

A

Avalanche Energy (Note 6)

L = 30mH

60

mJ

Peak Diode Recovery dv/dt

dv/dt

2.8

V/ns

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Power Dissipation (Note 5)

41

16

W

Thermal Resistance, Junction to Ambient (Note 6)

49.5

°C/W

Thermal Resistance, Junction to Case (Note 5)

3

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

800

—

—

V

—

—

25

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

2.0

3.3

4.0

V

Static Drain-Source On-Resistance

—

1.4

2.0

Ω

Diode Forward Voltage

—

0.86

1.5

V

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

—

1253

—

pF

f = 1.0MHz

Output Capacitance

—

115

—

Reverse Transfer Capacitance

—

11

—

Gate Resistance

—

1.5

—

Ω

Total Gate Charge

—

35.4

—

nC

Gate-Source Charge

—

5.9

—

Gate-Drain Charge

—

16.4

—

Turn-On Delay Time

—

20.5

—

ns

Turn-On Rise Time

—

35.8

—

ns

Turn-Off Delay Time

—

104

—

ns

Turn-Off Fall Time

—

42.6

—

ns

Body Diode Reverse Recovery Time

—

419

—

ns

Body Diode Reverse Recovery Charge

—

4324

—

µC

Notes:

5. Device mounted on an infinite heatsink.

6. Guaranteed by design. Not subject to production testing.

8. Short duration pulse test used to minimize self-heating effect.

9. Drain current limited by maximum junction temperature.