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DMN90H2D2HCTI Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN90H2D2HCTI
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN90H2D2HCTI Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN90H2D2HCTI
Document number: DS38826 Rev. 4 - 2
2 of 7
www.diodes.com
September 2016
© Diodes Incorporated
DMN90H2D2HCTI
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
900
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current (Notes 5)
VGS = 10V (Note 6)
TC = +25°C
TC = +100°C
ID
6
4
A
Pulsed Drain Current
IDM
24
A
Avalanche Current, L = 60mH (Note 7)
IAS
3.5
A
Avalanche Energy, L = 60mH (Note 7)
EAS
360
mJ
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Power Dissipation (Note 5)
TC = +25°C
TC = +100°C
PD
40
14
W
Thermal Resistance, Junction to Case (Note 5)
TC = +25°C
RθJC
3.6
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
900
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
1
µA
VDS = 900V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = ±30V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
3
4
5
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
1.7
2.2
Ω
VGS = 10V, ID = 3A
Diode Forward Voltage
VSD
0.85
1.2
V
VGS = 0V, IS = 6A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
1487
pF
VDS = 25V, f = 1MHz,
VGS = 0V
Output Capacitance
Coss
113
Reverse Transfer Capacitance
Crss
1
Gate Resistance
Rg

4.7

Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg

20.3

nC
VDD = 720V, ID = 6A,
VGS = 10V
Gate-Source Charge
Qgs
6.4
Gate-Drain Charge
Qgd
6.1
Turn-On Delay Time
tD(ON)
39
ns
VDD = 450V, VGS = 10V,
Rg = 25Ω, ID = 6A
Turn-On Rise Time
tR
49
Turn-Off Delay Time
tD(OFF)
51
Turn-Off Fall Time
tF

31

Body Diode Reverse Recovery Time
tRR
607
ns
IF = 6A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR

8.1

µC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Drain current limited by maximum junction temperature.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.



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