DMN6070SY datasheet(2/7 Pages) DIODES

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DMN6070SY

Document number: DS39440 Rev. 1 - 2

2 of 7

www.diodes.com

January 2017

DMN6070SY

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

4.1

3.3

Pulsed Drain Current (10

μs Pulse, Duty Cycle ≦1%)

IDM

Maximum Body Diode Continuous Current (Note 6)

2.5

Pulsed Body Diode Current (10

μs Pulse, Duty Cycle ≦1%)

ISM

Avalanche Current, L=0.1mH (Note 7)

IAS

Avalanche Energy, L=0.1mH (Note 7)

EAS

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

0.9

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

122

°C/W

t<10s

°C/W

Total Power Dissipation (Note 6)

TA = +25°C

2.1

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

°C/W

t<10s

°C/W

Thermal Resistance, Junction to Case (Note 6)

RJC

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS



ID = 250μA, VGS= 0V

Zero Gate Voltage Drain Current

IDSS



μA

VDS= 60V, VGS= 0V

Gate-Source Leakage

IGSS



100

VGS= 16V, VDS= 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.0



3.0

ID= 250μA, VDS= VGS

Static Drain-Source On-Resistance

RDS(ON)



Ω

VGS= 10V, ID= 2.5A

110

VGS= 4.5V, ID= 1.5A

Diode Forward Voltage

VSD



0.75

1.2

IS= 12A, VGS= 0V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss



588



VDS= 30V, VGS= 0V

f= 1MHz

Output Capacitance

Coss



26.5



Reverse Transfer Capacitance

Crss



Gate Resistance



1.5



Ω

Vgs= 0V, Vds= 0V, f=1MHz,

Total Gate Charge (VGS= 4.5V)



5.6



VDS= 30V, ID= 3A

Total Gate Charge (VGS= 10V)



12.3



Gate-Source Charge

Qgs



1.7



Gate-Drain Charge

Qgd



1.9



Turn-On Delay Time

tD(ON)



3.5



VDD= 30V, VGS= 10V

RL  50Ω, Rg  20Ω

Turn-On Rise Time



4.1



Turn-Off Delay Time

tD(OFF)



Turn-Off Fall Time



Body Diode Reverse Recovery Time

tRR

—

IS = 12A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—

IS = 12A, di/dt = 100A/μs

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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