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M54561P Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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M54561P Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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1 / 4 page ![]() Aug. 1999 27k 20k 7k 3k INPUT OUTPUT SUB* VS The seven circuits share the VS and SUB. * SUB must be the lowest voltage in a circuit. The diodes shown by broken line are parasite diodes and must not be used. Unit : Ω PIN CONFIGURATION (TOP VIEW) DESCRIPTION M54561P is seven-circuit output-sourcing Darlington transis- tor arrays. The circuits are made of PNP and NPN transis- tors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES q High breakdown voltage (BVCEO ≥ 40V) q High-current driving (Io(max) = –300mA) q With output clamping diodes q Active “L” input q Wide operating temperature range (Ta = –20 to +75°C) APPLICATION Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic sys- tems and relays, solenoids, or small motors FUNCTION The M54561P have seven circuits of current-sourcing out- puts. Darlington transistor, which are made of PNP transis- tor and NPN transistor. Resistance of 20k Ω is connected be- tween PNP transistor base and input pin. PNP transistor emitters and NPN transistor collector is connected VS (pin 8), and spike killer clamping diode is provided between each output pins. Output currene is 300mA maximum and supply voltage VS is 40V maximum operate Active “L” input. CIRCUIT SCHEMATIC MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE 1 IN1 → INPUTS OUTPUTS IN2 → IN3 → IN4 → IN5 → IN6 → IN7 → SUB VS 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 →O7 →O6 →O5 →O4 →O3 →O2 →O1 Outline 16P4 ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C) –0.5 ~ VS 40 –0.5 ~ VS –300 –300 40 1.47 –20 ~ +75 –55 ~ +125 Ratings Unit Symbol Parameter Conditions Collector-emitter voltage Supply voltage Input voltage Output current Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature VCEO VS VI IO IF VR Pd Topr Tstg Output, L Current per circuit output, H Ta = 25°C, when mounted on board V V V mA mA V W °C °C |
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