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L2N7002SWT3G Datasheet(PDF) 2 Page - Leshan Radio Company |
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L2N7002SWT3G Datasheet(HTML) 2 Page - Leshan Radio Company |
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2 / 7 page ![]() L2N7002SWT1G, S-L2N7002SWT1G Small Signal MOSFET 5. THERMAL CHARACTERISTICS Total Device Dissipation(Note 1) – Steady State – t<5s Junction−to−Ambient(Note 1) – Steady State – t<5s Junction and Storage temperature 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Drain–Source Breakdown Voltage (VGS = 0, ID = 250μAdc) Zero Gate Voltage Drain Current TJ = 25°C (VGS = 0, VDS = 60 Vdc) TJ = 125°C (VGS = 0, VDS = 50 Vdc) TJ = 25°C Gate–Body Leakage Current, Forward (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse (VGS = - 20 Vdc) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = 250μAdc) Negative Threshold Temperature Coefficient Static Drain–Source On–State Resistance (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 4.5 Vdc, ID = 200 mAdc) Forward Transconductance (VDS = 5.0 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Total Gate Charge Gate−to−Source Charge Gate−to−Drain Charge 1. FR–4 = 1.0×0.75×0.062 in. 2.Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤2.0%. -10 Drain−to−Source Breakdown Voltage Temperature Coefficient VBRDSS/TJ - - 71 pF pF Ciss - 21 - Coss Crss - 12 - - 0.35 - pF Ω - Vdc 100 IGSSF - - 10 Typ. Max. IGSSR VGS(th) IDSS - μAdc - Unit VBRDSS Vdc 60 - - Symbol Min. 1.0 - 2.0 - - - 3.2 - - 0.1 - nC ESD ºC −55 ∼+150 TJ,Tstg 260 417 Gate−Source ESD Rating(HBM, Method 3015) 2000 V Unit mW ºC PD Parameter Lead Temperature for Soldering Purposes (1/8 " from case for 10 s) VGS = 4.5 V, VDS = 10 V; ID= 500 mA QG(TOT) QGS QGD - - - 300 RΘJA 300 ºC/W Symbol Limits TL 420 0.44 0.2 RDS(on) - 1.0 - gfs mS mV/ºC 500 nAdc VGS(TH)/TJ 4 - - mV/ºC - 80 - - - 2.8 μAdc μAdc Leshan Radio Company, LTD. Rev.A Dec 2016 2/7 |
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