DMNH6042SSD-13 datasheet(2/7 Pages) DIODES

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DMNH6042SSD

Document number: DS37631 Rev. 1 - 2

2 of 7

www.diodes.com

July 2016

DMNH6042SSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

5.3

4.4

Steady

State

TC = +25°C

TC = +100°C

16.7

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

Maximum Continuous Body Diode Forward Current (Note 6)

2.3

Avalanche Current (Note 7) L = 10mH

IAS

3.5

Avalanche Energy (Note 7) L = 10mH

EAS

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

1.5

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

100

°C/W

t<10s

Total Power Dissipation (Note 6)

2.1

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

RθJC

7.25

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.0

—

3.0

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

VGS = 10V, ID = 5.1A

—

VGS = 4.5V, ID = 4.4A

Diode Forward Voltage

VSD

—

0.8

1.2

VGS = 0V, IS = 2.6A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

584

—

VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

Reverse Transfer Capacitance

Crss

—

Gate Resistance

—

3.8

—

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

4.2

—

VDS = 44V, ID = 5.2A

Total Gate Charge (VGS = 10V)

—

8.8

—

Gate-Source Charge

Qgs

—

1.8

—

Gate-Drain Charge

Qgd

—

1.8

—

Turn-On Delay Time

tD(ON)

—

3.4

—

VGS = 10V, VDS = 30V,

RG = 6Ω, ID = 1A

Turn-On Rise Time

—

1.9

—

Turn-Off Delay Time

tD(OFF)

—

10.1

—

Turn-Off Fall Time

—

4.5

—

Body Diode Reverse Recovery Time

tRR

—



12.9

—



IF = 2.6A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—



5.4

—



Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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