DMNH6042SSDQ datasheet(2/7 Pages) DIODES

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DMNH6042SSDQ

Document number: DS37829 Rev. 4 - 2

2 of 7

www.diodes.com

August 2016

DMNH6042SSDQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 7) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

5.3

4.4

Steady

State

TC = +25°C

TC = +100°C

16.7

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

Maximum Continuous Body Diode Forward Current (Note 7)

2.3

Avalanche Current (Note 8) L = 10mH

IAS

3.5

Avalanche Energy (Note 8) L = 10mH

EAS

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

1.5

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

100

°C/W

t<10s

Total Power Dissipation (Note 7)

2.1

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 7)

RθJC

7.25

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(TH)

1.0

—

3.0

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

Ω

VGS = 10V, ID = 5.1A

—

VGS = 4.5V, ID = 4.4A

Diode Forward Voltage

VSD

—

0.8

1.2

VGS = 0V, IS = 2.6A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

CISS

—

584

—

VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Gate Resistance

—

3.8

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

4.2

—

VDS = 44V, ID = 5.2A

Total Gate Charge (VGS = 10V)

—

8.8

—

Gate-Source Charge

QGS

—

1.8

—

Gate-Drain Charge

QGD

—

1.8

—

Turn-On Delay Time

tD(ON)

—

3.4

—

VGS = 10V, VDS = 30V,

RG = 6Ω, ID = 1A

Turn-On Rise Time

—

1.9

—

Turn-Off Delay Time

tD(OFF)

—

10.1

—

Turn-Off Fall Time

—

4.5

—

Body Diode Reverse Recovery Time

tRR

—



12.9

—



IF = 2.6A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—



5.4

—



Notes:

6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

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