USBULC6-2N4 datasheet(2/10 Pages) STMICROELECTRONICS

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Characteristics

USBULC6-2N4

2/10

Doc ID 18332 Rev 1

Characteristics

Figure 3.

Junction capacitance versus frequency ( VR = 0 V, typical values)

Table 1.

Absolute maximum ratings Tamb = 25 °C

Symbol

Parameter

Value

Unit

VPP

ESD discharge IEC 61000-4-2, level 4

Contact discharge

Air discharge

Ipp

Peak pulse current (8/20 µs)

Ppp

Peak pulse power dissipation (8/20 µs)

Operating temperature range

-40 to + 150

°C

Tstg

Storage temperature range

-65 to +150

°C

Maximum lead temperature for soldering during 10 s

260

°C

Table 2.

Electrical characteristics Tamb = 25 °C, otherwise specified

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBR

LV diode breakdown voltage

IR = 1 mA

IRM

LV diode leakage current

VRM = 3 V

100

LV diode input capacitance

VR = 0 V, F= 240 MHz to 3 GHz

Any I/O pin to ground

0.6

0.75

VCL

LV diode clamping voltage

IPP = 1 A, tp = 8/20 µs

Any I/O pin to ground

0.00

0.25

0.50

0.75

1.00

250

500

750 1000 1250 1500 1750 2000 2250 2500 2750 3000

C(pF)

F=1MHz – 3GHz

osc=30mVRMS

Vr=0V

j=25 °C

A1/GND

A2/GND

F(MHz)

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