SSM3K03FE

2003-03-27

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K03FE

High Speed Switching Applications

Analog Switch Applications

· 2.5 V gate drive

· High input impedance

· Small package

==== 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

20

V

Gate-source voltage

10

V

DC drain current

100

mA

Drain power dissipation

100

mW

Channel temperature

150

°C

Storage temperature range

-55~150

°C

Marking

Equivalent Circuit

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2HA1B

Weight: 2.3 mg (typ.)