DMP10H4D2S-13 datasheet(2/6 Pages) DIODES

2 / 6 page

DMP10H4D2S

Document number: DS37891 Rev. 3 - 2

2 of 6

www.diodes.com

May 2017

DMP10H4D2S

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-100

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

-0.27

-0.21

Pulsed Drain Current (10

μs Pulse, Duty Cycle

1%)

IDM

-1.0

Maximum Body Diode Continuous Current (Note 6)

-0.42

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation

(Note 5)

0.38

(Note 6)

0.44

Thermal Resistance, Junction to Ambient

Steady

State

(Note 5)

RθJA

333

°C/W

Thermal Resistance, Junction to Ambient

(Note 6)

RθJA

282

Thermal Resistance, Junction to Case

(Note 6)

RθJC

115

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

-100



VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS



µA

VDS = -100V, VGS = 0V

Gate-Body Leakage

IGSS



±10

μA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

-1.0

-2.3

-3.0

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS(ON)



2.8

4.2

Ω

VGS = -10V, ID = -0.5A



3.2

5.0

VGS = -4.0V, ID = -0.1A

Diode Forward Voltage

VSD



-0.82

-1.3



VGS = 0V, IS = -0.2A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss



VDS = -25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss



5.6



Reverse Transfer Capacitance

Crss



2.9



Gate Resistance



15.3



Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge



1.8



VDS = -80V, VGS = -10V,

ID = -0.5A

Gate-Source Charge

Qgs



0.3



Gate-Drain Charge

Qgd



0.5



Turn-On Delay Time

tD(ON)



3.3



VDS = -50V, ID = -0.5A,

VGS = -10V, RG = 10Ω

Turn-On Rise Time



2.6



Turn-Off Delay Time

tD(OFF)



8.4



Turn-Off Fall Time



4.9



Reverse Recovery Time

tRR



17.8



VR = -100V, IF = -1.0A,

di/dt = 100A/µs

Reverse Recovery Charge

QRR



24.8



Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

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