DMP22D4UDA

Document number: DS38655 Rev. 2 - 2

2 of 7

www.diodes.com

May 2017

© Diodes Incorporated

DMP22D4UDA

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

Continuous Drain Current (Note 5)

Steady

State

-328

-262

mA

Pulsed Drain Current (Note 6)

-1000

mA

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

310

mW

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

407

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6.

Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-20

—

—

V

Zero Gate Voltage Drain Current

—

—

-1

μA

Gate-Source Leakage

—

—

±10

μA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.4

-0.7

-1.0

V

Static Drain-Source On-Resistance

—

1.2

1.9

Ω

—

1.6

2.4

—

1.9

3.4

—

2.4

5

Diode Forward Voltage

—

-0.6

-1.1

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

28.5

—

pF

f = 1.0MHz

Output Capacitance

—

3.9

—

pF

Reverse Transfer Capacitance

—

2.4

—

pF

Gate Resistance

—

398

—

Ω

Total Gate Charge

—

0.4

—

nC

Gate-Source Charge

—

0.07

—

nC

Gate-Drain Charge

—

0.07

—

nC

Turn-On Delay Time

—

5.2

—

ns

Turn-On Rise Time

—

4.3

—

ns

Turn-Off Delay Time

—

31

—

ns

Turn-Off Fall Time

—

15.4

—

ns

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.