000-0059H1007-100

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SLG59H1007V

Setting the SLG59H1007V’s Input Overvoltage Lockout Threshold

As shown in the table below, SEL[1,0] selects the VIN overvoltage threshold at which the SLG59H1007V’s internal state machine

will turn OFF (open circuit) the power MOSFET if VIN exceeds the selected threshold.

For example, SEL[1,1] would be the most appropriate setting for applications where the steady-state VIN can extend up to 20V

without causing any damage to the SLG59H1007V since the IC is 29-V tolerant.

With an activated SLG59H1007V (ON=HIGH) and at any time VIN crosses the programmed VIN overvoltage threshold, the state

the programmed VIN OVLO threshold, the SLG59H1007V’s state machine will keep the power switch open circuited if the ON

until VIN resumes nominal, steady-state operation.

Power Dissipation

The junction temperature of the SLG59H1007V depends on different factors such as board layout, ambient temperature, and

other environmental factors. The primary contributor to the increase in the junction temperature of the SLG59H1007V is the power

dissipation of its power MOSFET. Its power dissipation and the junction temperature in nominal operating mode can be calculated

using the following equations:

where:

PD = Power dissipation, in Watts (W)

and

where:

In current-limit mode, the SLG59H1007V’s power dissipation can be calculated by taking into account the voltage drop across

SEL1

SEL0

VIN OVLO (Typ)

00

5.85 V

01

10.5 V

10

14.0 V

11

23.4 V