TDA8920BTH datasheet(13/34 Pages) PHILIPS

13 / 34 page

9397 750 13356

Preliminary data sheet

Rev. 01 — 1 October 2004

13 of 34

Philips Semiconductors

TDA8920B

× 100 W class-D power ampliﬁer

[1]

The circuit is DC adjusted at VP = ±12.5 V to ±30 V.

[2]

With respect to SGND (0 V).

[3]

The transition between Standby and Mute mode contain hysteresis, while the slope of the transition between Mute and Operating mode

is determined by the time-constant on the MODE pin; see Figure 7.

[4]

DC output offset voltage is applied to the output during the transition between Mute and Operating mode in a gradual way. The slope of

the dV/dt caused by any DC output offset is determined by the time-constant on the MODE pin.

12. Dynamic characteristics

12.1 Switching characteristics

Temperature protection

Tprot

temperature protection activation

150

°C

Thys

hysteresis on temperature protection

°C

Table 7:

Static characteristics …continued

VP = ±27 V; fosc = 317 kHz; Tamb = 25 °C; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 7.

Behavior of mode selection pin MODE.

STBY

MUTE

5.5

coa021

VMODE (V)

4.2

3.0

2.2

0.8

VO (V)

Voo (mute)

Voo (on)

slope is directly related to

time-constant on the MODE pin

Table 8:

Switching characteristics

VDD = ±27 V; Tamb =25 °C; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Internal oscillator

fosc

typical internal oscillator frequency

ROSC = 30.0 kΩ

290

317

344

kHz

fosc(int)

internal oscillator frequency range

210

600

kHz

External oscillator or frequency tracking

VOSC

high-level voltage on pin OSC

SGND + 4.5

SGND + 5

SGND + 6

VOSC(trip)

trip level for tracking on pin OSC

SGND + 2.5

ftrack

frequency range for tracking

210

600

kHz

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