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DMP2022LSS-13 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMP2022LSS-13
Description  SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP2022LSS-13 Datasheet(HTML) 2 Page - Diodes Incorporated

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DMP2022LSS
Document number: DS31373 Rev. 6 - 2
2 of 6
www.diodes.com
December 2017
© Diodes Incorporated
DMP2022LSS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
12
V
Drain Current (Note 5)
Steady
State
TA = +25°C
TA = +70°C
ID
-10
-8
A
Pulsed Drain Current (Note 6)
IDM
-90
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
2.5
W
Thermal Resistance, Junction to Ambient
RJA
50
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
5. Device mounted on 2 oz. Copper pads on FR-4 PCB.
6. Pulse width
10S, Duty Cycle 1%.
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-20
V
VGS = 0V, ID = -250A
Zero Gate Voltage Drain Current
IDSS
-1
A
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
-0.6
-0.77
-1.1
V
VDS = VGS, ID = -250A
Static Drain-Source On-Resistance
RDS(ON)
8
13
m
VGS = -10V, ID = -10A

11
16
VGS = -4.5V, ID = -9A

17
22
VGS = -2.5V, ID = -8A
Forward Transconductance
gfs
28
S
VDS = -10V, ID = -10A
Diode Forward Voltage (Note 7)
VSD
-0.5
-0.68
-1.2
V
VGS = 0V, IS = -3A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
2444
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
594
pF
Reverse Transfer Capacitance
Crss
556
pF
Gate Resistance
RG

2.0

VGS = 0V, VDS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Qg

28.1
56.9

nC
VDS = -10V, VGS = -4.5V, ID = -10A
VDS = -10V, VGS = -10V, ID = -10A
Gate-Source Charge
Qgs

3.4

VDS = -10V, VGS = -10V, ID = -10A
Gate-Drain Charge
Qgd

11.9

VDS = -10V, VGS = -10V, ID = -10A
Turn-On Delay Time
tD(ON)

7.5
15
ns
VDD = -15V, ID = -1A, VGS = -10V,
RGEN = 6Ω
Turn-On Rise Time
tR

9.9
20
Turn-Off Delay Time
tD(OFF)

108.0
216
Turn-Off Fall Time
tF

76.5
153
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.



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