ALD110814_16 datasheet(7/12 Pages) ALD

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ALD110814/ALD110914, Vers. 2.3

Advanced Linear Devices

7 of 12

TYPICAL PERFORMANCE CHARACTERISTICS (cont.)

AMBIENT TEMPERATURE (°C)

GATE LEAKAGE CURRENT

vs. AMBIENT TEMPERATURE

10000

1000

100

0.1

0.01

-50

-25

125

100

IGSS

DRAIN-SOURCE ON RESISTANCE (KΩ)

GATE SOURCE VOLTAGE vs.

DRAIN-SOURCE ON RESISTANCE

VGS(th)

VGS(th)+3

VGS(th)+2

VGS(th)+4

VGS(th)+1

VDS

IDS(ON)

VGS

+25°C

+125°C

0.0V ≤ VDS ≤ 5.0V

DRAIN-SOURCE ON CURRENT (µA)

DRAIN-GATE DIODE CONNECTED VOLTAGE

TEMPCO vs. DRAIN-SOURCE ON CURRENT

110

100

1000

2.5

-2.5

-5

-55°C ≤ TA ≤ +125°C

TRANSFER CHARACTERISTICS

GATE-SOURCE VOLTAGE (V)

-4

-2

1.6

0.8

0.0

0.4

1.2

VGS(th) = -3.5V

VGS(th) = -0.4V

VGS(th) = 0.0V

VGS(th) = +0.2V

VGS(th) = -1.3V

VGS(th) = +0.8V

VGS(th) = +1.4V

TA = +25°C

VDS = +10V

5.0

2.0

1.0

0.5

0.2

0.1

DRAIN-SOURCE ON VOLTAGE (V)

ZERO TEMPERATURE

COEFFICIENT CHARACTERISTICS

0.6

0.5

0.3

0.2

0.0

VGS(th) = -3.5V

VGS(th) = -1.3V, -0.4V, 0.0V, +0.2V, +0.8V, +1.4V

2.5

2.0

1.5

1.0

0.5

0.0

-0.5

SUBTHRESHOLD CHARACTERISTICS

100000 10000

1000

100

0.1

DRAIN-SOURCE ON CURRENT (nA)

VGS(th) = +0.2V

TA = +25°C

VGS(th) = +0.2V

TA = +55°C

VGS(th) = +0.4V

TA = +25°C

VGS(th) = +0.4V

TA = +55°C

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