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DMP3035LSS Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMP3035LSS
Description  SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP3035LSS Datasheet(HTML) 2 Page - Diodes Incorporated

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DMP3035LSS
Document number: DS31443 Rev. 10 - 3
2 of 6
www.diodes.com
September 2017
© Diodes Incorporated
DMP3035LSS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
25
V
Drain Current (Note 5) (VGS = -20V)
Steady
State
TA = +25°C
TA = +70°C
ID
-10
-8
A
Pulsed Drain Current (Note 6)
IDM
-80
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
2.0
W
Thermal Resistance, Junction to Ambient
RθJA
60
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -30V, VGS = 0V
Gate-Source Leakage
IGSS


100
800
nA
VGS = 20V, VDS = 0V
VGS = 25V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
-1
-2
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)

11
15
27
14
18
36
m
VGS = -20V, ID = -11A
VGS = -10V, ID = -8A
VGS = -4.5V, ID = -5A
Forward Transconductance
Gfs
12
S
VDS = -10V, ID = -12A
Diode Forward Voltage (Note 7)
VSD
-0.5
-1.1
V
VGS = 0V, IS = -2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
1,655
pF
VDS = -20V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
286
pF
Reverse Transfer Capacitance
Crss
240
pF
Gate Resistance
RG

2.3

VGS = 0V, VDS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Qg

15.3
30.7

nC
VDS = -15V, VGS = -4.5V, ID = -8A
VDS = -15V, VGS = -10V, ID = -8A
Gate-Source Charge
Qgs

3.5

VDS = -15V, VGS = -10V, ID = -8A
Gate-Drain Charge
Qgd

7.9

VDS = -15V, VGS = -10V, ID = -8A
Turn-On Delay Time
tD(ON)

5.1

ns
VGS = -10V, VDS = -15V,
RD = 15Ω, RG = 6Ω
Rise Time
tR

8

Turn-Off Delay Time
tD(OFF)

46

Fall Time
tF

30

Notes:
5. Device mounted on 1 inch
2 FR-4 board with 2 oz. copper, in a still-air environment with TA = +25°C.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
NOT RECOMMENDED FOR NEW DESIGN
USE DMP3036SSS



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