DMP3036SFG-13 datasheet(2/7 Pages) DIODES

2 / 7 page

DMP3036SFG

Document number: DS37038 Rev. 5 - 2

2 of 7

www.diodes.com

December 2017

DMP3036SFG

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-30

Gate-Source Voltage

VGSS

±25

Continuous Drain Current (Note 6) VGS = -10V

TA = +25°C

TA = +70°C

-8.7

-7.0

Continuous Drain Current (Note 7) VGS = -10V

TC = +25°C

TC = +70°C

-30

-25

Continuous Drain Current (Note 6) VGS = -5V

TA = +25°C

TA = +70°C

-7.2

-5.8

Continuous Drain Current (Note 7) VGS = -5V

TC = +25°C

TC = +70°C

-30

-24

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

-80

Maximum Continuous Body Diode Forward Current (Note 6)

-3.6

Avalanche Current (Note 7) L=0.3mH

IAS

-17.5

Avalanche Energy (Note 7) L=0.3mH

EAS

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

0.9

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

137

°C/W

t<10s

°C/W

Total Power Dissipation (Note 6)

2.3

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

°C/W

t<10s

°C/W

Thermal Resistance, Junction to Case (Note 7)

RJC

3.5

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-30

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current

IDSS

-1.0

μA

VDS = -30V, VGS = 0V

Gate-Source Leakage

IGSS

±100

VGS = ±25V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

-1.0

-2.0

-2.5

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS(ON)

Ω

VGS = -10V, ID = -8A

18.4

VGS = -5V, ID = -5A

Diode Forward Voltage

VSD

-0.7

-1.2

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

1931

VDS = -15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

226

Reverse Transfer Capacitance

Crss

168

Gate Resistance

10.9

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge VGS = -5V

8.8

VDS = -15V, ID = -10A

Total Gate Charge VGS = -10V

16.5

Gate-Source Charge

Qgs

2.6

Gate-Drain Charge

Qgd

3.6

Turn-On Delay Time

tD(ON)

8.2

VGS = -10V, VDD = -15V,

RGEN = 3Ω, ID = -10A

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

31.6

Reverse Recovery Time

tRR

9.3

IF = -8A, di/dt = 500A/µs

Reverse Recovery Charge

QRR

12.2

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Thermal resistance from junction to soldering point (on the exposed drain pad).

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMP3036SFG-13 Datasheet(PDF) 2 Page - Diodes Incorporated

DMP3036SFG-13 Datasheet(HTML) 2 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL