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AP60WN2K1I Datasheet(PDF) 1 Page - Advanced Power Electronics Corp.

Part # AP60WN2K1I
Description  N-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP60WN2K1I Datasheet(HTML) 1 Page - Advanced Power Electronics Corp.

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AP60WN2K1I
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ 100% UIS Test
BVDSS
600V
▼ Simple Drive Requirement
RDS(ON)
2.07Ω
▼ Fast Switching Characteristic
ID
3
5A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings@Tj=25
oC(unless otherwise specified)
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Drain Current, VGS @ 10V
3
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
PD@TA=25℃
Total Power Dissipation
W
EAS
Single Pulse Avalanche Energy
4
mJ
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4
/W
Rthj-a
65
/W
Data & specifications subject to change without notice
31.2
Halogen-Free Product
Parameter
15
Rating
600
+30
5
1
201612022
1.92
-55 to 150
-55 to 150
Maximum Thermal Resistance, Junction-ambient
12.5
G
D
S
G
D
S
TO-220CFM(I)
AP60WN2K1 series are from the innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
.


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