AP3P010AMT datasheet(4/6 Pages) A-POWER

Part #	AP3P010AMT

Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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4 / 6 page

AP3P010AMT

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

2011082301

Fig 11. Transfer Characteristics

Fig 12. Drain Current v.s. Case Temperature

406080

Q G , Total Gate Charge (nC)

I D = -12 A

V DS = -15V

2000

4000

6000

8000

-V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + Tc

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.1

100

1000

0.1

100

-V DS , Drain-to-Source Voltage (V)

T C =25

o C

Single Pulse

100us

1ms

10ms

Operation in this

area limited by

RDS(ON)

100

125

150

T C , Case Temperature (

o C )

0123

456

-V GS , Gate-to-Source Voltage (V)

T j =150

o C

T j =25

o C

V DS = -5V

T j = -55

o C

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