DMP3010LPS-13 datasheet(2/7 Pages) DIODES

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DMP3010LPS

Document number: DS32239 Rev. 13 - 3

2 of 7

www.diodes.com

November 2017

DMP3010LPS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-30

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 7) VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

-36

-29

Continuous Drain Current (Note 7) VGS = -4.5V

Steady

State

TA = +25°C

TA = +70°C

-31

-25

Continuous Drain Current (Note 6) VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

-14.5

-11.5

Pulsed Drain Current (Notes 6 & 9)

IDM

-100

Avalanche Current (Notes 10 & 11)

IAS

-17.5

Avalanche Energy (Notes 10 & 11) L = 1mH

EAS

153

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

1.26

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)

RθJA

°C/W

Power Dissipation (Note 6)

2.18

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)

RθJA

°C/W

Power Dissipation (Note 7)

14.37

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7)

RθJA

8.7

°C/W

Power Dissipation (Notes 7 & 8)

58.7

Thermal Resistance, Junction to Case @TC = +25°C (Notes 7 & 8)

RθJC

2.13

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 11)

Drain-Source Breakdown Voltage

BVDSS

-30

—

VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS

—

-1.0

μA

VDS = -30V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 11)

Gate Threshold Voltage

VGS(TH)

-1.1

-1.6

-2.1

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS(ON)

—

5.7

7.5

Ω

VGS = -10V, ID = -10A

—

7.2

VGS = -4.5V, ID = -10A

Forward Transfer Admittance

|Yfs|

—

VDS = -15V, ID = -10A

Diode Forward Voltage

VSD

—

-0.65

-1.0

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 12)

Input Capacitance

Ciss

—

6,234

—

VDS = -15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

1,500

—

Reverse Transfer Capacitance

Crss

—

774

—

Gate Resistance

—

1.28

—

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -10V)

—

126.2

—

VDS = -15V, ID = -10A

Total Gate Charge (VGS = -4.5V)

—

59.2

—

VDS = -15V, VGS = -4.5V,

ID = -10A

Gate-Source Charge

Qgs

—

16.1

—

Gate-Drain Charge

Qgd

—

15.7

—

Turn-On Delay Time

tD(ON)

—

11.4

—

VDS = -15V, VGEN = -10V,

RG = 6Ω, ID = -1A

Turn-On Rise Time

—

9.4

—

Turn-Off Delay Time

tD(OFF)

—

260.7

—

Turn-Off Fall Time

—

99.3

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Device mounted on FR-4 PCB with infinite heatsink.

8. RθJC is guaranteed by design while RθCA is determined by the user’s board design.

9. Repetitive rating, pulse width limited by junction temperature, 10s pulse, duty cycle = 1%.

10. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

11. Short duration pulse test used to minimize self-heating effect.

12. Guaranteed by design. Not subject to product testing.

NOT RECOMMENDED FOR NEW DESIGN

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