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DMP3056LSS-13 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMP3056LSS-13
Description  SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP3056LSS-13 Datasheet(HTML) 2 Page - Diodes Incorporated

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DMP3056LSS
Document number: DS31419 Rev. 8 - 2
2 of 6
www.diodes.com
February 2017
© Diodes Incorporated
DMP3056LSS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
20
V
Drain Current (Note 5)
Steady
State
TA = +25°C
TA = +70°C
ID
-7.1
-6.0
A
Pulsed Drain Current (Pulse Width
10S, Duty Cycle 1%)
IDM
-20
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
2.5
W
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
50
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -30V, VGS = 0V
Gate-Source Leakage
IGSS
100
800
nA
VGS = 20V, VDS = 0V
VGS = 25V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(TH)
-1
-1.7
-2.1
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)


45
65
m
VGS = -10V, ID = -6.0A
VGS = -4.5V, ID = -5.0A
Forward Transconductance
gfs
8
S
VDS = -10V, ID = -5.3A
Diode Forward Voltage (Note 6)
VSD
-0.5
-1.2
V
VGS = 0V, IS = -1.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
722
pF
VDS = -25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
114
pF
Reverse Transfer Capacitance
Crss
92
pF
Gate Resistance
RG

3.3

VDS = 0V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 7)
Total Gate Charge
QG

6.8

nC
VDS = -15V, VGS = -4.5V,
ID = -6A
QG

13.7

nC
VDS = -15V, VGS = -10V,
ID = -6A
Gate-Source Charge
QGS

1.6

Gate-Drain Charge
QGD

4.18

Turn-On Delay Time
tD(ON)

6.4

ns
VDS = -15V, VGS = -10V,
ID = -1A, RG = 6.0
Rise Time
tR

5.3

Turn-Off Delay Time
tD(OFF)

26.5

Fall Time
tF

14.7

Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing



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