DMP6110SVTQ-7 datasheet(2/7 Pages) DIODES

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DMP6110SVTQ

Document number: DS39190 Rev. 1 - 2

2 of 7

www.diodes.com

October 2016

DMP6110SVTQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-60

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 7) VGS = -10V

TC = +25°C

TC = +70°C

-7.3

-5.8

Maximum Body Diode Forward Current (Note 7)

-1.8

Pulsed Drain Current (380µs Pulse, 1% Duty Cycle)

IDM

-24

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

TA = +25°C

1.2

TA = +70°C

0.75

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

105

°C/W

t<10s

°C/W

Total Power Dissipation (Note 7)

TA = +25°C

1.8

TA = +70°C

1.1

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

RθJA

°C/W

t<10s

°C/W

Thermal Resistance, Junction to Case (Note 7)

RθJC

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-60



VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS



-1

µA

VDS = -48V, VGS = 0V

Gate-Source Leakage

IGSS



100

VGS = ±16V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

-1



-3

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS(ON)



105

mΩ

VGS = -10V, ID = -4.5A



130

VGS = -4.5V, ID = -3.5A

Diode Forward Voltage

VSD



-0.7

-1.2

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

CISS



969



VDS = -30V, VGS = 0V, f = 1.0MHz

Output Capacitance

COSS



Reverse Transfer Capacitance

CRSS



Gate Resistance



13.7



Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = -4.5V)



8.2



VDS = -30V, ID = -12A

Total Gate Charge (VGS = -10V)



17.2



Gate-Source Charge

QGS



3.0



Gate-Drain Charge

QGD



3.1



Turn-On Delay Time

tD(ON)



4.4



VGS = -10V, VDS = -30V, RGEN = 3Ω,

ID = -12A

Turn-On Rise Time



Turn-Off Delay Time

tD(OFF)



Turn-Off Fall Time



Body Diode Reverse Recovery Time

tRR



13.2



IS = -12A, dI/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR



6.18



Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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