SFH4350_16 datasheet(2/9 Pages) OSRAM

2 / 9 page

2016-09-23

Version 1.5

SFH 4350

Maximum Ratings (TA = 25 °C)

Characteristics (TA = 25 °C)

Parameter

Symbol

Values

Unit

Operation and storage temperature range

op; Tstg

-40 ... 100

°C

Reverse voltage

Forward current

100

Surge current

p ≤ 100 µs, D = 0)

FSM

Power consumption

Ptot

180

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

VESD

Thermal resistance junction - ambient 1) page 8

RthJA

450

K / W

Parameter

Symbol

Values

Unit

Peak wavelength

F = 100 mA, tp = 20 ms)

(typ)

peak

860

Centroid wavelength

(IF = 100 mA, tp = 20 ms)

(typ)

centroid

850

Spectral bandwidth at 50% of Imax

(IF = 100 mA, tp = 20 ms)

(typ)

∆λ

Half angle

(typ)

± 13

Dimensions of active chip area

(typ)

L x W

0.3 x 0.3

mm x

Rise and fall time of I

e ( 10% and 90% of Ie max)

F = 100 mA, RL = 50 Ω)

(typ)

r, tf

Forward voltage

(IF = 100 mA, tp = 20 ms)

(typ (max)) V

1.5 (≤ 1.8)

Forward voltage

(IF = 1 A, tp = 100 µs)

(typ (max)) VF

2.4 (≤ 3)

Reverse current

R = 5 V)

not designed for

reverse operation

µA

Total radiant flux

F=100 mA, tp=20 ms)

(typ)

Temperature coefficient of I

e or Φe

(IF = 100 mA, tp = 20 ms)

(typ)

-0.5

% / K

Temperature coefficient of VF

(IF = 100 mA, tp = 20 ms)

(typ)

TCV

-0.7

mV / K

Temperature coefficient of wavelength

F = 100 mA, tp = 20 ms)

(typ)

TCλ

0.3

nm / K

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