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2SD2150-R Datasheet(PDF) 1 Page - Micro Commercial Components |
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2SD2150-R Datasheet(HTML) 1 Page - Micro Commercial Components |
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1 / 3 page  Features Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current -Continuous 3.0 A PC Collector dissipation 500 mW TJ Junction Temperature -55 to +150 OC TSTG Storage Temperature -55 to +150 OC Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Typ Max Units OFF CHARACTERISTICS V(BR)CBO Collector-Base Breakdown Voltage (IC=50 µAdc, IE=0) 40 --- --- Vdc V(BR)CEO Collector-Emitter Breakdown Voltage (IC=1.0mAdc ,IB=0) 20 --- --- Vdc V(BR)EBO Collector-Emitter Breakdown Voltage (IE=50 µAdc, IC=0) 6.0 --- --- Vdc ICBO Collector Cutoff Current (VCB= 30Vdc,IE=0) --- --- 0.1 µAdc IEBO Emitter Cutoff Current (VEB= 5.0Vdc, IC=0) --- --- 0.1 ON CHARACTERISTICS hFE DC Current Gain (IC= 100mAdc,VCE=2.0Vdc) 180 --- 560 --- VCE(sat) Collector-Emitter Saturation Voltage 0. 5 Vdc fT Gain-Bandwidth product (VCE= 2V, IC=500mA,f=100MHz) --- 290 --- MHz Cob Out Capacitance (VCB=10V, f=1.0MHz,IE=0) --- 25 --- pF hFE CLASSIFICATION Rank R S Range 180-390 270-560 SOT-89 1. Base 2. Collector 3. Emitter omponents 20736 Marilla Street Chatsworth !"# $% !"# Revision: A 201 7/01/14 www.mccsemi.com 1 of 3 Marking CFR CFS • Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) B A E D G H F K J C 123 NPN Plastic-Encapsulate Transistors (IC= 2.0Adc, IB=0.1Adc) 25 1.55 .061 REF. µAdc Micro Commercial Components M C C R 2S D2150-R 2S D2150-S • Excellent current-to-gain characteristics • Low collector saturation voltage VCE(sat) • Halogen free available upon request by adding suffix "-HF" • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 |
Similar Part No. - 2SD2150-R |
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Similar Description - 2SD2150-R |
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