DMN2055U

Document number: DS40487 Rev. 3 - 2

2 of 7

www.diodes.com

March 2018

© Diodes Incorporated

DMN2055U

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±8

V

Continuous Drain Current (Note 6)

Steady

State

4.8

3.8

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

25

A

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

0.8

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

162

°C/W

Total Power Dissipation (Note 6)

1.2

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

113

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

20

—

—

V

—

—

1.0

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.4

—

1.0

V

Static Drain-Source On-Resistance

—

28

38

m

Ω

32

45

Diode Forward Voltage

—

0.7

1.0

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

400

—

pF

f = 1.0MHz

Output Capacitance

—

55

—

pF

Reverse Transfer Capacitance

—

37

—

pF

Gate Resistance

—

3.7

—

Ω

Total Gate Charge

—

4.3

—

nC

Gate-Source Charge

—

0.3

—

nC

Gate-Drain Charge

—

4.8

—

nC

Turn-On Delay Time

—

2.8

—

ns

Turn-On Rise Time

—

2.7

—

ns

Turn-Off Delay Time

—

15.4

—

ns

Turn-Off Fall Time

—

4.4

—

ns

Reverse Recovery Time

—

6.8

—

ns

Reverse Recovery Charge

—

1.2

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.