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IPP65R660CFD Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IPP65R660CFD Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IPP65R660CFD,IIPP65R660CFD ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA 650 V VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.2mA 3.5 4.5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=2.1A 0.66 Ω IGSS Gate-Source Leakage Current VGS=20V; VDS=0V 0.1 μ A IDSS Drain-Source Leakage Current VDS=650V; VGS= 0V 1 μ A VSD Diode forward voltage IF=3.2A; VGS = 0V 0.9 V |
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