DTC143TM datasheet(1/3 Pages) MCC

Part #	DTC143TM

Description	NPN Digital Transistors

PDF	3 Pages

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Manufacturer	MCC [Micro Commercial Components]

Direct Link	http://www.mccsemi.com

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1 / 3 page

DT

C143TM

Features

•

Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors

•

The bias resistors consist of thin-film resistors with complete

isolation to allow negative biasing of the input. They also have the

advantage of almost completely eliminating parasitic effects.

•

Only the on/off conditions need to be set for operation, making

device design easy

Symbol

Parameter

Rating

Unit

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

50

IC

Collector current

100

mA

Pd

Power dissipation

100

mW

Tj

Junction temperature

150

Tstg

Storage temperature

-55

~150

Revision: A

2017/01/21

NPN

Digital Transistors

V

SOT-

723

Suggested Solder

Pad Layout

1.

00

0.

42

0.

30

0.

32

0.

80

www.mccsemi.com

1 of 3

Marking:

03

•

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisure Sensitivity Level 1

omponents

20736 Marilla

Street Chatsworth

!"#

$% !"#

mm

Halogen free available upon request by adding suffix "-HF"

•

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.

045

.

049

1.15

1.25

C

.0

30

.0

33

0.75

0.85

E

0.031TYP.

0.80TYP.

B

.

045

.

049

1.15

1.25

E

D

.0

11

.0

15

0.27

0.37

F

.0

07

.0

11

0.17

0.27

G

.0

17

.0

20

0.43

0.50

H

J

H

.0

03

.0

06

0.08

0.15

J

.0

00

.0

02

0.00

0.05

1

2

3

A

C

B

1.IN

2.GND

3.OUT

G

D

Micro Commercial Components

M C C

R

0.

30

•

Equivalent circuit

MaximumRatings @TA=25°C,Unless Otherwise noted

VEBO

Emitter-Base Voltage

5

V

Electrical Characteristics @TA=25°C,Unless Otherwise specified

Symbol

Parameter

Min

Typ

Max

Units

V(BR)CEO

Collector-Emitter Breakdown Voltage

(IC=1mAdc, IB=0)

50

----

Vdc

V(BR)CBO

Collector-Base Breakdown Voltage

(IC=

50µAdc, I

E=0)

50

----

Vdc

V(BR)EBO

Emitter-Base Breakdown Voltage

(IE=

50µAdc, I

C=0)

5

Vdc

ICBO

Collector Cutoff Current

(VCB=

50Vdc, I

E=0)

---

0.5

µAdc

IEBO

Emitter Cutoff Current

(VEB=

4Vdc, I

C=0)

----

0.5

µAdc

hFE

DC Current Gain

(IC=1

mAdc, V

CE=

5Vdc)

100

VCE(sat)

Collector-Emitter Saturation Voltage

(IC=

5mAdc, I

B=0.2

5mAdc)

----

0.

3

Vdc

ft

Transition frequency

(VCE=

10Vdc, f=100MHz, IE=5mA)

MHz

R1

Input resistor

3.29

6.11

----

---

600

----

-

4.7

250

KΩ

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