DMTH10H010SPS datasheet(2/7 Pages) DIODES

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DMTH10H010SPS

Document number: DS39423 Rev. 2 - 2

2 of 7

www.diodes.com

August 2017

DMTH10H010SPS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

100

Gate-Source Voltage

VGSS

±20

Continuous Drain Current, VGS = 10V (Note 5)

TA = +25°C

TA = +100°C

11.8

8.3

Continuous Drain Current, VGS = 10V (Note 6)

TC = +25°C

TC = +100°C

123

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

250

Maximum Continuous Body Diode Forward Current

100

Avalanche Current, L = 0.3mH

IAS

33.7

Avalanche Energy, L = 0.3mH

EAS

170

Avalanche Current (Note 7), L = 3mH

IAS

14.3

Avalanche Energy (Note 7), L = 3mH

EAS

307

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

1.5

Thermal Resistance, Junction to Ambient (Note 5)

RθJA

°C/W

Total Power Dissipation (Note 6)

TC = +25°C

166

Thermal Resistance, Junction to Case (Note 6)

RθJC

0.9

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

100

—

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS

—

µA

VDS = 80V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

—

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

6.6

8.8

Ω

VGS = 10V, ID = 13A

—

8.5

11.5

VGS = 6V, ID = 13A

Diode Forward Voltage

VSD

—

0.8

1.3

VGS = 0V, IS = 13A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

CISS

—

4,468

—

VDS = 50V, VGS = 0V

f = 1MHz

Output Capacitance

COSS

—

746

—

Reverse Transfer Capacitance

CRSS

—

Gate Resistance

—

0.91

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

—

56.4

—



VDD = 50V, ID = 13A,

VGS = 10V

Gate-Source Charge

QGS

—

15.4

—

Gate-Drain Charge

QGD

—

Turn-On Delay Time

tD(ON)

—

18.6

—

VDD = 50V, VGS = 10V,

ID = 13A, Rg = 6Ω

Turn-On Rise Time

—

22.5

—

Turn-Off Delay Time

tD(OFF)

—

44.8

—

Turn-Off Fall Time

—

29.5

—

Reverse Recovery Time

tRR

—

54.5

—

IF = 13A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

106.4

—

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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