2N7002KA datasheet(2/4 Pages) MCC

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2017/04/14

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ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Type

Max

Unit

Static Characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250µA

Zero gate voltage drain current

IDSS

VDS =48V,VGS = 0V

µA

Gate-body leakage current

IGSS1

VGS =±20V, VDS = 0V

±10

µA

IGSS2

VGS =±10V, VDS = 0V

±200

IGSS2

VGS =±5V, VDS = 0V

±100

Gate threshold voltage*

VGS(th)

VDS =VGS, ID =250µA

1.4

2.5

Drain-source on-resistance*

RDS(on)

VGS =10V, ID =500mA

1.2

Ω

VGS =4.5V, ID =200mA

1.3

5.3

Recovered charge

VGS=0V,IS=300mA,VR=25V,

dls/dt=-100A/µS

Dynamic characteristics**

Input Capacitance

Ciss

VDS=10V,VGS=0V,f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching Characteristics**

Turn-on delay time

td(on)

VGS=10 V, VDD=50V, RG=50Ω

RGS=50Ω,RL=250Ω

Turn-off delay time

td(off)

Reverse recovery Time

trr

VGS=0V,IS=300mA,VR=25V,

dls/dt=-100A/µS

Source-Drain Diode characteristics

Diode Forward voltage

VSD

VGS =0V, IS=300mA

1.5

GATE-SOURCE ZENER DIODE

Gate-Source Breakdown Voltage

BVGSO

IGS=±1mA(Open Drain)

±21.5

±30

Notes:

*Pulse Test: Pulse Width ≤300µs ，Duty Cycle ≤2%.

**These parameters have no way to ver

ify.

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