2016-09-16

2

Version 1.4

SFH 221

Parameter

Symbol

Values

Unit

Operating and storage temperature range

T

-40 ... 125

°C

Reverse voltage

V

R

10

V

Insulation voltage vs. package

V

IS

100

V

Total Power dissipation

P

tot

50

mW

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

V

ESD

2000

V

Parameter

Symbol

Values

Unit

Spectral sensitivity

(typ)

S

24 (≥ 15)

nA/Ix

Wavelength of max. sensitivity

(typ)

900

nm

Spectral range of sensitivity

(typ)

λ

10%

(typ) 400

... 1100

nm

Radiant sensitive area

(typ)

A

1.54

Dimensions of radiant sensitive area

(typ)

L x W

0.7 x 2.2

mm x

mm

Half angle

(typ)

ϕ

± 55

°

Dark current

10 (≤ 100)

nA

Spectral sensitivity of the chip

(λ = 850 nm)

(typ)

0.55

A / W

Max. deviation from average for each single diode

(typ)

∆S

±5

%

Quantum yield of the chip

(λ = 850 nm)

(typ)

η

0.80

Electro

ns

/Photon

Open-circuit voltage

(typ (min))

330 (≥ 280)

mV

Short-circuit current

(E

(typ)

I

SC

24

µA

Insulation current

(V

(typ (max)) I

IS

0.1 (≤ 1)

nA

Rise and fall time

(typ)

0.5

µs

Forward voltage

(typ)

1

V