1 - 4

© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

550

V

V

DGR

T

J

= 25

°C to 150°C; R

550

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C22

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

88

A

I

AR

T

C

= 25

°C22

A

E

AR

T

C

= 25

°C30

mJ

dv/dt

I

S

£ I

5

V/ns

T

P

D

T

C

= 25

°C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

6g

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

550

V

V

GS(th)

V

DS

= V

2

4.5

V

I

GSS

V

±100 nA

I

DSS

V

DS

= 0.8 • V

DSS

T

250

mA

V

T

mA

R

DS(on)

V

0.27

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

TO-247 AD

IXFH 22 N55

V

DSS

= 550 V

Power MOSFET

I

D (cont)

= 22 A

R

DS(on)

= 0.27

W

t

rr

£ 250 ns

G = Gate,

D = Drain,

S = Source,

TAB = Drain

N-Channel Enhancement Mode

Avlanche Rated, High dv/dt, Low t

rr

Preliminary data

Features

• International standard packages

JEDEC TO-247 AD

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance (< 5 nH)

- easy to drive and to protect

• Fast intrinsic Rectifier

Applications

• Power Factor Control Circuits

• Uninterruptible Power Supplies (UPS)

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount with 1 screw

(isolated mounting screw hole)

• Space savings

• High power density

D (TAB)

94527A (10/95)

IXYS reserves the right to change limits, test conditions, and dimensions.