FZT855

Document Number DS33176 Rev. 7 - 2

2 of 7

www.diodes.com

April 2017

© Diodes Incorporated

FZT855

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

250

V

Collector-Emitter Voltage

150

V

Emitter-Base Voltage

7

V

Continuous Collector Current

5

A

Peak Pulse Current

10

A

Base Current

1

A

Characteristic

Symbol

Value

Unit

Power Dissipation

Linear Derating Factor

(Note 5)

3.0

24

W

mW/°C

(Note 6)

1.6

12.8

Thermal Resistance, Junction to Ambient

(Note 5)

42

°C/W



(Note 6)

78

Thermal Resistance Junction to Lead

(Note 7)

8.8

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

≥ 8,000

V

3B

Electrostatic Discharge - Machine Model

ESD MM

≥ 400

V

C

Notes:

5. For a device surface mounted on 52mm X 52mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; device measured when

operating in steady state condition.

6. Same as Note 5, except the device is mounted on 25mm x 25mm single sided 1oz weight copper.

7. Thermal resistance from junction to solder-point (at the end of the collector lead).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.