IRF250P225 datasheet(4/17 Pages) INFINEON

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Final Datasheet

V1.0

2017-02-27

IR MOSFET-StrongIRFET™

IRF250P225

Table 2

Maximum ratings (at TJ=25°C, unless otherwise specified)

Parameter

Symbol

Values

Unit

Continuous Drain Current

Pulsed Drain Current 

IDM

276

Maximum Power Dissipation

313

Linear Derating Factor

2.1

W/°C

Gate-to-Source Voltage

VGS

± 20

Operating Junction and

Storage Temperature Range

TSTG

-55 to + 175

°C

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

Conditions

TC = 25°C, VGS @ 10V

TC = 100°C, VGS @ 10V

TC = 25°C

Notes:



Repetitive rating; pulse width limited by max. junction temperature.



Limited by TJmax, starting TJ = 25°C, L = 0.52mH, RG = 50, IAS = 41A, VGS =10V.



ISD  41A, di/dt  926A/µs, VDDV(BR)DSS, TJ 175°C.



Pulse width  400µs; duty cycle  2%.



Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.



Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.



R is measured at TJ approximately 90°C.



Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 31A, VGS =10V.

Table 4

Avalanche characteristics

Parameter

Symbol

Values

Unit

Single Pulse Avalanche Energy 

EAS(Thermallylimited)

444

Single Pulse Avalanche Energy 

EAS(Thermallylimited)

489

Avalanche Current 

IAR

See Fig 16, 17, 23a, 23b

Repetitive Avalanche Energy 

EAR

Table 3

Thermal characteristics

Parameter

Symbol

Conditions

Typ.

Max.

Unit

Junction-to-Case 

RJC

TJ approximately 90°C

0.48

°C/W

Case-to-Sink, Flat Greased Surface

RCS

0.24

Junction-to-Ambient

RJA

Min.

Maximum ratings and thermal characteristics

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