CDBD2SC21200-G datasheet(2/2 Pages) COMCHIP

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Silicon Carbide Power Schottky Diode

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Unit

Electrical Characteristics (at TA=25°C, unless otherwise noted)

Total capacitive charge

Total capacitance

Conditions

150

136

Parameter

Max.

Symbol

Min.

Forward voltage

IF = 2A, Tj = 25°C

1.7

IF = 2A, Tj = 175°C

Typ.

1.62

2.8

Reverse current

μA

200

VR = 1200V, Tj = 25°C

VR = 1200V, Tj = 175°C

100

VR = 800V, Tj = 150°C

QC = ∫

C(V) dv

VR = 0V, Tj = 25°C, f = 1MHZ

VR = 400V, Tj = 25°C, f = 1MHZ

VR = 800V, Tj = 25°C, f = 1MHZ

RATING AND CHARACTERISTIC CURVES (CDBD2SC21200-G)

Forward Voltage, VF (V)

Reverse Voltage, VR (V)

0.004

Reverse Voltage, VR (V)

Fig.4 - Capacitance VS. Reverse Voltage

400

800

1200

0.002

0.006

0.008

0.014

Fig.3 - Current Derating

Case Tempature, TC (°C)

125

150

175

100

0.01

0.1

100

1000

600

1000

200

120

140

0.010

0.012

160

1.0

0.5

1.5

2.0

2.5

0.5

1.0

1.5

2.0

2.5

3.0

3.5

3.0

3.5

4.0

4.5

TJ=25°C

TJ=75°C

TJ=125°C

TJ=175°C

1400

10% Duty

30% Duty

50% Duty

70% Duty

Fig.1 - Forward Characteristics

Fig.2 - Reverse Characteristics

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