CDBDSC8650-G datasheet(2/2 Pages) COMCHIP

2 / 2 page

Page 2

QW-BSCXX

REV:

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

Unit

Electrical Characteristics (at TA=25°C, unless otherwise noted)

Total capacitive charge

Total capacitance

Conditions

588

550

Parameter

Max.

Symbol

Min.

Forward voltage

IF = 8A, Tj = 25°C

1.7

2.5

IF = 8A, Tj = 175°C

Typ.

1.45

1.75

Reverse current

μA

200

VR = 650V, Tj = 25°C

VR = 650V, Tj = 175°C

100

VR = 400V, Tj = 150°C

QC = ∫

C(V) dv

VR = 0V, Tj = 25°C, f = 1MHZ

VR = 200V, Tj = 25°C, f = 1MHZ

VR = 400V, Tj=25°C, f=1MHZ

56.5

54.5

RATING AND CHARACTERISTIC CURVES (CDBDSC8650-G)

Silicon Carbide Power Schottky Diode

Reverse Voltage, VR (V)

Fig.4 - Capacitance vs. Reverse Voltage

100

200

250

600

400

0.01

0.1

100

1000

Fig.2 - Reverse Characteristics

150

300

350

450

Reverse Voltage, VR (V)

0.04

0.09

200

400

800

0.05

0.07

100

300

600

500

700

0.01

0.06

0.08

0.02

Case Tempature, TC (°C)

Fig.1 - Forward Characteristics

Forward Voltage, VF (V)

2.0

1.6

2.4

0.4

1.2

0.8

Fig.3 - Current Derating

TJ=75°C

T =125°C

TJ=25°C

T =175°C

0.03

T =175°C

T =125°C

TJ=25°C

TJ=75°C

500

550

150

175

125

100

10%

Duty

30% Du

50% D

uty

70% Du

CDBDSC8650-G Datasheet(PDF) 2 Page - Comchip Technology

CDBDSC8650-G Datasheet(HTML) 2 Page - Comchip Technology

Html Pages

1 2

Datasheet Download

Link URL