CDBJFSC101200-G datasheet(2/3 Pages) COMCHIP

2 / 3 page

Electrical Characteristics (at TA=25°C unless otherwise noted)

Parameter

Conditions

Symbol

Typ

Max

Unit

Typical Characteristics (

)

CDBJFSC101200-G

Page 2

Total capacitance

Total capacitive charge

Forward voltage

VR = 0V , TJ = 25°C , f = 1 MHZ

µA

VR = 800V , TJ = 150°C

1.7

100

IF = 10 A , TJ = 25°C

IF = 10 A , TJ = 175°C

VR = 1200V , TJ = 25°C

VR = 1200V , TJ = 175°C

1.63

Reverse Voltage, VR (V)

Fig.4 - Capacitance vs. Reverse Voltage

200

400

500

1000

800

0.01

0.1

100

1000

Reverse current

QC = ∫

C(V) dv

2.55

780

100

QW-BSC14

REV:A

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

Fig.2 - Reverse Characteristics

100

300

600

700

900

Case Tempature, TC (°C)

Fig.3 - Current Derating

Fig.1 - Forward Characteristics

Forward Voltage, VF (V)

2.0

1.5

3.0

0.5

1.0

2.5

TJ=25°C

TJ=175°C

Reverse Voltage, VR (V)

0.02

0.08

400

800

1600

0.04

0.06

200

600

1200

1000

1400

0.03

0.05

0.07

0.01

TJ=175°C

TJ=125°C

TJ=25°C

TJ=75°C

150

175

125

100

Silicon Carbide Power Schottky Diode

10% Duty

30% Duty

50% Duty

70% Duty

D.C.

TJ=125°C

TJ=75°C

CDBJFSC101200-G Datasheet(PDF) 2 Page - Comchip Technology

CDBJFSC101200-G Datasheet(HTML) 2 Page - Comchip Technology

Html Pages

1 2 3

Datasheet Download

Link URL